RF saçtırma yöntemi ile biriktirilen CdS ve ZnS ince filmlerin karakterizasyonu ve heteroeklem üretiminde kullanılması
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Tarih
2016
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Erişim Hakkı
info:eu-repo/semantics/embargoedAccess
Özet
II–VI grubu bileşiklerinden CdS ve ZnS oda sıcaklığında geniş ve doğrudan bant aralığına sahip olmasından dolayı güneş pilleri, optik sensörler ve kızılötesi pencereler gibi optoelektronik uygulamalarda oldukça önemli bir yer bulmaktadır. Bu çalışmada RF saçtırma yöntemi ile biriktirilen CdS ve ZnS ince filmlerinin yüzey ve optik özelliklerine alttaş sıcaklığının etkisi incelendi. Yüksek saflıkta CdS ve ZnS hedefler kullanılarak 40, 150 ve 275 oC alttaş sıcaklıklarında p–Si ve cam üzerine CdS ve ZnS ince filmleri oluşturuldu. Elde edilen filmlerin yüzey özellikleri AFM ve SEM yöntemleri ile araştırıldı. Ayrıca optik özellikleri de UV–Vis ölçümleri ile belirlendi. Alttaş sıcaklığının ince filmlerin fiziksel yapısı üzerine etkisi açık bir şekilde gözlendi. Ag/CdS/p–Si ve Ag/ZnS/p–Si heteroeklem diyotları termal buharlaştırma yoluyla elde edildi. Yapıların karanlıkta ve güneş simülatörü altında alınan I–V ölçümleri ile elektriksel ve fotoelektriksel özellikleri araştırıldı. Üretilen heteroeklemlerin iyi doğrultucu kontak davranışı gösterdiği gözlendi. I–V ve C–V eğrilerinden idealite faktörü, engel yüksekliği ve seri direnç gibi elektriksel parametreler hesaplandı. Elde edilen sonuçlar literatürde mevcut bulunan CdS ve ZnS heteroeklem kontaklarla karşılaştırıldı. Anahtar Kelimeler: CdS, ZnS, SEM, AFM, heteroeklem, engel yüksekliği, idealite faktörü ve seri direnç
The CdS and ZnS II–VI compounds are of great importance in the optoelectronic applications, for example, in solar cells, optical sensors, infrared windows because of its direct and wide band gap at room temperature. This study presents the effects of substrate temperature on morphological and optical properties of radio frequency (RF) sputtered CdS and ZnS thin films. The thin films were formed on p–Si wafer and soda lime glasses at 40, 150 and 275 oC using high purity CdS and ZnS targets. Morphological properties of CdS and ZnS thin films were analyzed by the help of atomic force microscopy (AFM) and scanning electron microscopy (SEM) methods. The optical properties of sputtered the thin films were determined using UV–vis data. It was seen that substrate temperature had strong effects on physical characteristics of thin films. Ag/CdS/p–Si and Ag/ZnS/p–Si heterojunction diodes were fabricated by thermally evaporation. Electrical and photoelectrical properties of the heterojunctions were analyzed at room temperature by means of current–voltage (I–V) measurements of devices in dark and under a solar simulator with various illumination intensities. The heterojunctions were showed good rectifying behavior by the I–V curves at room temperature. The barrier height, ideality factor and series resistance parameters were investigated using its current–voltage (I–V) measurements. Obtained results have been compared with available results of CdS and ZnS heterjunction contacts in literature. Key Words: CdS, ZnS, SEM, AFM, heterojunction, barrier height, ideality factor and series resistance.
The CdS and ZnS II–VI compounds are of great importance in the optoelectronic applications, for example, in solar cells, optical sensors, infrared windows because of its direct and wide band gap at room temperature. This study presents the effects of substrate temperature on morphological and optical properties of radio frequency (RF) sputtered CdS and ZnS thin films. The thin films were formed on p–Si wafer and soda lime glasses at 40, 150 and 275 oC using high purity CdS and ZnS targets. Morphological properties of CdS and ZnS thin films were analyzed by the help of atomic force microscopy (AFM) and scanning electron microscopy (SEM) methods. The optical properties of sputtered the thin films were determined using UV–vis data. It was seen that substrate temperature had strong effects on physical characteristics of thin films. Ag/CdS/p–Si and Ag/ZnS/p–Si heterojunction diodes were fabricated by thermally evaporation. Electrical and photoelectrical properties of the heterojunctions were analyzed at room temperature by means of current–voltage (I–V) measurements of devices in dark and under a solar simulator with various illumination intensities. The heterojunctions were showed good rectifying behavior by the I–V curves at room temperature. The barrier height, ideality factor and series resistance parameters were investigated using its current–voltage (I–V) measurements. Obtained results have been compared with available results of CdS and ZnS heterjunction contacts in literature. Key Words: CdS, ZnS, SEM, AFM, heterojunction, barrier height, ideality factor and series resistance.
Açıklama
Anahtar Kelimeler
CdS, ZnS, SEM, AFM, Heteroeklem, Heterojunction, Engel yüksekliği, Barrier height, İdealite faktörü, Ideality factor, Seri direnç, Series resistance
