Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods

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dc.contributor.authorAydın, Mehmet Enver
dc.contributor.authorYakuphanoǧlu, Fahrettin
dc.contributor.authorEom, Jae-Hoon
dc.contributor.authorHwang, Do-Hoon
dc.date.accessioned2024-04-24T17:56:10Z
dc.date.available2024-04-24T17:56:10Z
dc.date.issued2007
dc.departmentDicle Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe electrical characterization of the Al/poly[2-methoxy-5-(2?-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)/p-Si structure has been investigated by current-voltage and capacitance-voltage methods. The Al/MEH-PPV/p-Si Schottky diode with the ideality factor value of 1.88 obeys a metal-interfacial layer-semiconductor (MIS) configuration rather than an ideal Schottky diode due to the existence of an insulating layer on the organic semiconductor. The barrier height (?b, o = 0.80 eV) obtained from the I-V characteristic is lower than the barrier height (?b, o = 1.19 eV) obtained from the C-V characteristic. The discrepancy between ?b, o (I - V) and ?b, o (C - V) can be due to the existence of the interfacial native oxide and the organic MEH-PPV layers between the semiconductor and Schottky contact metal. The barrier height value for the Al/MEH-PPV film/p-Si/Al contact obtained at the room temperature that is significantly larger than that for the conventional Al/p-Si Schottky diode. The density distribution curves of the interface states is in the range (0.32-Ev) to (0.68-Ev)eV. The interface state density Nss ranges from 3.84×1014 cm-2 eV-1 in (0.32-Ev)eV to 1×1014 cm-2 eV-1 in (0.68-Ev)eV, of the Al/MEH-PPV/p-Si. The interface state density has an exponential rise with bias from the midgap towards the top of the valence band of the p-Si.en_US
dc.description.sponsorshipFirat Üniversitesi, FU; Türkiye Bilimsel ve Teknolojik Araştirma Kurumu, TÜBITAK; Firat University Scientific Research Projects Management Unit, FÜBAP: 1230en_US
dc.description.sponsorshipDr Mehmet Enver Aydın wishes to thank TUBITAK (The Scientific and Technological Research Council of Turkey) for a national postdoc scholarship. This work was also partially supported by The Management Unit of Scientific Research Projects of Firat University (FÜBAP) under Project 1230. The authors are grateful to The Management Unit of Scientific Research Projects of Firat University.en_US
dc.identifier.citationAydın, M. E., Yakuphanoǧlu, F., Eom, J. H. ve Hwang, D. H. (2007). Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods. Physica B: Condensed Matter, 387(1-2), 239-244.
dc.identifier.doi10.1016/j.physb.2006.04.012
dc.identifier.endpage244en_US
dc.identifier.issn0921-4526
dc.identifier.issue1-2en_US
dc.identifier.scopus2-s2.0-33751435082
dc.identifier.scopusqualityQ2
dc.identifier.startpage239en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2006.04.012
dc.identifier.urihttps://hdl.handle.net/11468/23341
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0921452606008295?via%3Dihub
dc.identifier.volume387en_US
dc.indekslendigikaynakScopus
dc.language.isoenen_US
dc.relation.ispartofPhysica B: Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIdeality factoren_US
dc.subjectInterface states distributionen_US
dc.subjectOrganic and inorganic semiconductor contact and schottky barrier heighten_US
dc.subjectSeries resistanceen_US
dc.titleElectrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methodsen_US
dc.titleElectrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods
dc.typeArticleen_US

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