Yazar "Yakuphanoglu, Fahrettin" seçeneğine göre listele

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    Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer
    (Elsevier, 2011) Aydin, Mehmet Enver; Soylu, Murat; Yakuphanoglu, Fahrettin; Farooq, W. A.
    The electronic properties of metal-organic semiconductor-inorganic semiconductor structure between GaAs and poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic film have been investigated via current-voltage and capacitance-voltage methods. The Au/PEDOT/n-GaAs contact exhibits a rectification behavior with the barrier height of 0.69 eV and ideality factor value of 3.94. The barrier height of the studied diode (0.67 eV) is lower than that of Ni/n-GaAs/In (0.85 eV) and Au/n-GaAs/In Schottky diodes. The decrease in barrier height of Au/n-GaAs/In Schottky diode is likely to be due to the variation in the space charge region in the GaAs. The obtained results indicate that control of the interfacial potential barrier for metal/n-GaAs diode was achieved using thin interlayer of the poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol). (c) 2010 Elsevier B.V. All rights reserved.
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    Öğe
    Electrical and interface state density properties of the 4H-nSiC/[6,6]-phenyl C61-butyric acid methyl ester/Au diode
    (Elsevier, 2008) Aydin, M. E.; Yakuphanoglu, Fahrettin
    The electrical and interface state density properties of the Ni/4H-nSiC/PCBM/Au diode have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The ideality factor, barrier height and series resistance values of the diode were found to be 2.28, 1.10eV and 3.76 x 10(4) Omega, respectively. The diode shows a non-ideal I-V behaviour with an ideality factor greater than unity that could be ascribed to the interfacial layer, interface states and series resistance. The obtained barrier height (1.10 eV) of the Ni/4H-nSiC/PCBM/Au diode is lower than that of Ni/4H-nSiC diode (1.32 eV). This indicates that the PCBM organic layer induces a change of 160 meV in the barrier height of the Ni/4H-nSiC diode. The interface state density of the diode was determined from G(p)/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). (C) 2008 Elsevier B.V. All rights reserved.
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    Öğe
    Electrical and photovoltaic properties of a n-Si/chitosan/Ag photodiode
    (Elsevier, 2008) Akkilic, Kernal; Yakuphanoglu, Fahrettin
    The electrical and photovoltaic properties of AuSb/n-Si/chitosan/Ag diode have been investigated. The ideality factor, barrier height and Richardson constant values of the diode at room temperature were found to be 1.91, 0.88 eV and 121.4 A/cm(2) K-2, respectively. The ideality factor of the diode is higher than unity, suggesting that the diode shows a non-ideal behaviour due to series resistance and barrier height inhomogeneities. The barrier height and ideality factor values of Ag/CHT/n-Si diode at room temperature are significantly larger than that of the conventional Ag/n-Si Schottky diode. The phi(B) value obtained from C-V measurement is higher than that of phi(B) value obtained from I-V measurement. The discrepancy between phi(B)(C-V) and phi(B)(I-V) barrier height values can be explained by Schottky barrier height inhomogeneities. AuSb/n-Si/chitosan/Ag diode indicates a photovoltaic behaviour with open circuit voltage (V-oc = 0.23 V) and short-circuit current density (I-sc = 0.10 mu A/cm(-2)) values. (C) 2008 Elsevier B.V. All rights reserved.
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    Öğe
    Modification of electrical properties of the Au/1,1? dimethyl ferrocenecarboxylate/n-Si Schottky diode
    (Elsevier Science Sa, 2010) Aydin, M. Enver; Yakuphanoglu, Fahrettin; Ozturk, Gulsen
    The electrical and interface state density properties of the Au/1,1' dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I-V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1' dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters. (C) 2010 Elsevier B.V. All rights reserved.