Yazar "Ocak, Y. S." seçeneğine göre listele

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    60Co ?-irradiation effects on electrical properties of a rectifying diode based on a novel macrocyclic Zn octaamide complex
    (Elsevier, 2010) Ocak, Y. S.; Kilicoglu, T.; Topal, G.; Baskan, M. H.
    C36H28N12O8ZnC12 center dot 9/2H(2)O, Zn-octaamide (ZnOA) macrocyclic compound was synthesized to be used in the fabrication of electronic and photoelectronic devices. The structure of new compound was identified by using H-1 NMR, C-13 NMR, IR, UV-vis and LC-MS spectroscopic methods. The Sn/ZnOA/n-Si/Au structure was engineered by forming a thin macrocyclic organic compound layer on n-Si inorganic substrate and then by evaporating Sn metal on the organic layer. It was seen that the device had a good rectifying behaviour and showed Schottky diode properties. The diode was irradiated under Co-60 gamma-source at room temperature. Characteristic parameters of the diode were determined from its currentvoltage (I-V) and capacitance voltage (C-V) measurements before and after irradiation. It was observed that gamma-irradiation had clear effects on I-V and C-V properties. Also, it was seen that the barrier height, the ideality factor and the series resistance values decreased after the applied radiation, while the saturation current value increased. (C) 2009 Elsevier B.V. All rights reserved.
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    Ac conductivity and impedance spectroscopy study and dielectric response of MgPc/GaAs organic heterojunction for solar energy application
    (Elsevier, 2020) Benhaliliba, M.; Asar, T.; Missoum, I; Ocak, Y. S.; Ozcelik, S.; Benouis, C. E.; Arrar, A.
    The study concerns the C/omega-V performances and examination of dielectric response of MgPc/GaAs organic heterojunction (OHJ) structure of solar energy applications. Throughout this work, many characterizations have been achieved and various parameters have been extracted. C/omega-V and G/omega-V plots are subject to give much knowledge about the mechanism and behavior inside the OHJ. It is revealed that capacitance of OHJ increases with voltage defining deep depletion (dd), depletion (dep) and accumulation (ac) regions. Besides, Ac conductivity at room temperature increases with frequency in particular within the forward biasing voltage, reaching a high point of 28 x 10(-7) S/cm at 5 V. Real and imaginary terms of complex dielectric constant or well known by permittivity, epsilon versus ln omega are studied inside the 1.5V-2.5 V range. The real and imaginary parts of the impedance are found to be frequency dependence within the 1.5 V and 2.5 V bias range. Ac current conductivity sigma(Ac) against frequency (ln omega) of MgPc/GaAs OHJ inside 1.5V-2.5 V bias voltage range is well detailled; the average of conductivity about 8 x 10(-7) S/cm is then recorded. The impedance spectroscopy study is evidenced by the complex impedance M where real and imaginary part are M' and M ''. Profile of M' and M '' as function of voltage exhibits peaks for 3 kHz-300kHz frequency range. It is indicated that M '' and M' are roughly comprised between 0.08 and 1.12 and 0 and 2 respectively. Conduction mechanism is then determined by ln sigma-ln omega plots. The Cole-Cole diagram displays different curves of impedance as distinct semicircle for measured frequencies.
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    AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters
    (Sumy State Univ, Dept Marketing & Mia, 2015) Benhaliliba, M.; Ocak, Y. S.; Mokhtari, H.; Kilicoglu, T.
    In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm - 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO / pSi/Al Schottky is determined and found to be 1012 (eV.cm(2))(-1). Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 angstrom and 0.28 m.
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    The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si
    (Sumy State Univ, Dept Marketing & Mia, 2012) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Toprak, A.
    200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 degrees C for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V) measurements of the structures at room temperature and in dark have been compared with each others.
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    Calculation of current-voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode
    (Elsevier, 2010) Akkilic, K.; Ocak, Y. S.; Kilicoglu, T.; Ilhan, S.; Temel, H.
    In this Study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (11) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current-voltage (I-V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I-V characteristics range from 2.15 x 10(13) cm(-2) eV(-1) at (E-c - 0.66) eV to 5.56 x 10(12) cm(-2) eV(-1) at (E-c - 0.84) eV. (C) 2009 Elsevier B.V. All rights reserved.
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    Characterization of Coated Fe-Doped Zinc Oxide Nanostructures
    (Sumy State Univ, Dept Marketing & Mia, 2013) Benhaliliba, M.; Ocak, Y. S.; Tab, A.
    The nanostructures of iron-doped zinc oxide (FZO) produced by a simple and low cost dip-coating route onto a glass substrate were studied. The structural, morphological, electrical and optical properties of FZO films were investigated. Nanochains were revealed by SEM analysis at high magnification. A (002)-oriented wurzite structure with a lattice parameter of a = 3.24 angstrom and c= 5.19 angstrom was confirmed byX-rays diffraction. High transmittance was exhibited in the visible spectrum, T (550 nm) > 83 %. Finally, electrical measurements revealed a resistivity and mobility of 10 k Omega.cm, and 5 cm(2)/Vs respectively.
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    Cu/SnO2 gas sensor fabricated by ultrasonic spray pyrolysis for effective detection of carbon monoxide
    (Elsevier, 2019) Tombak, A.; Ocak, Y. S.; Bayansal, F.
    In this paper, we report results of morphological, structural, optical analysis of ultrasonically sprayed Cu-doped SnO2 thin films and their applications in conductometric gas sensors to detect small traces of CO molecules. Effects of Cu-doping on morphological, structural and optical properties of SnO2 nanostructures were investigated by Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), and UV-Vis. Spectroscopy measurements. Scanning electron microscopy revealed that porosity of the film surfaces is increased with increasing Cu-doping. From the XRD patterns, the size of the crystallites and crystal quality of the films are found to be decreased with Cu-doping. UV-Vis. spectroscopy results presented that the transmittance and bandgap can be manipulated with Cu-doping where both are decreased with Cu-doping. The relation between morphology and structure of the films with CO response properties are discussed properly. The gas response of the films with different Cu-doping has been investigated at different CO concentrations at different operating temperatures. From the sensing measurements, it is found that Cu-doping improves the SnO2 based sensor response to CO gas. Furthermore, the possible sensing mechanism to enlighten the improved gas sensing behavior of the films is proposed.
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    Current-voltage and capacitance-voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode
    (Elsevier Science Sa, 2009) Ocak, Y. S.; Kulakci, M.; Kilicoglu, T.; Turan, R.; Akkilic, K.
    Electrical and interfacial properties of Sn/Methylene Blue (MB)/p-Si Schottky diode have been determined by using current-voltage (I-V) and capacitance-voltage (C-V) measurements of the device at room temperature. Cheung functions and modified Norde functions have been used to obtain the electrical characteristics such as barrier height and series resistance of the diode. It has been seen that the MB layer modifies the effective barrier height of the structure because the layer creates the physical barrier between the metal and the semiconductor. Electrical properties of the device obtained from C-V characteristics have been compared with the ones obtained from its I-V characteristics. It has been seen that at sufficiently high frequencies, the charge at the interface cannot follow an ac signal. The interface state density of the diode has been also calculated. (C) 2009 Elsevier B.V. All rights reserved.
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    The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method
    (Elsevier, 2007) Kilicoglu, T.; Aydin, M. E.; Ocak, Y. S.
    Al/methyl red/p-Si Schottky barrier diodes (SBD) have been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrates, and then evaporating the solvent. The electronic and interface state density distribution properties were obtained from the current-voltage (I-P) and the capacitance-voltage (C-V) characteristics (high and low frequency) of Al/methyl red/p-Si SBD at room temperature. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range from (0.675-E-v) eV to (0.783-E-v) eV has been determined. In addition, the interface state density N-ss range from 6.12 x 10(13) cm(-2) eV(-1) in (0.675-E-v) eV to 4.31 x 10(12) cm(-2) eV(-1) in (0.783-E-v) eV. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valence band. (c) 2006 Elsevier B.V. All rights reserved.
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    Effect of Metal on Characteristics of MPc Organic Diodes
    (Sumy State Univ, Dept Marketing & Mia, 2014) Benhaliliba, M.; Ocak, Y. S.; Benouis, C. E.
    The fabrication and electrical characterization of metal phthalocyanine MPc organic diodes have been investigated. The Au / MPc / Si Schottky diodes are fabricated via a spin coating route. Based on the electrical measurement of the current versus bias voltage in dark conditions we extract the parameters such as ideality factor, saturation current, series resistance and rectifying factor. Role of metal M. Cu, Al, Zn, Mg on the electronic parameters is emphasized. The obtained values of n, 1.85, 2.22 and 4.40, show a non-ideal behavior. Using a derivate dV / dlnI and H(I) functions, we determine the ideality factor and series resistance and found to be 2 and 17 Omega for the CuPc device.
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    Effect of the binuclear Cu(II) complex interface layer on the calculation of electronic properties of Au/Cu(II) complex/n-Si organic-inorganic hybrid heterojunction
    (Elsevier Science Sa, 2008) Akkilic, K.; Ocak, Y. S.; Ilhan, S.; Kilicoglu, T.
    Electronic properties of organic-inorganic (01) hybrid heterojunction fabricated by forming a thin macrocyclic diamagnetic and binuclear Cu(II) complex [Cu-2(L)(ClO4)(2)][ClO4](2) (where L is C33H32N2O4) film on n-Si wafer have been studied. The Au/Cu(II) complex/n-Si contact has a rectifying behavior with the barrier height of 0.96 eV and the ideality factor of 2.96 determined from forward-bias current-voltage (I-V) characteristics at room temperature. The energy distribution of the interface state density (N-ss) in the semiconductor band gap at Cu(II) complex/n-Si interface obtained from I-V characteristics ranges from 1.62 x 10(13) cm(-1) eV(-1) at (E-c - 0.66)eV to 6.82 x 10(12) cm(-2) eV(-1) at (E-c - 0.9)eV. (C) 2008 Elsevier B.V. All rights reserved.
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    Gadolinium doping effect on SnO2 thin films optical and electrical properties
    (Iop Publishing Ltd, 2019) Adjimi, A.; Aida, M. S.; Attaf, N.; Ocak, Y. S.
    Undoped SnO2 thin films, as well as Gd-doped SnO2 thin films, were deposited on glass substrate by spray pyrolysis technique. The effect of gadolinium concentration and substrate annealing on structural, optical and electrical properties of SnO2 films are investigated. The structural properties of these thin films were analyzed using x-ray diffraction (XRD). XRD analysis confirmed the polycrystalline tetragonal crystalline structure of the films with mainly (110) preferential growth plane. The crystallite size has been reduced from 35 nm to 15 nm with increasing Gd dopant concentration. The films optical transmittance spectra exhibit high transparency of about 76%-87% in visible region. The films optical gap is enlarged from 3.43 eV in the un-doped films to 3.71 eV when Gd doped. The films figure of merit revealed a maximum value of about 8.2 x 10(-3) (Omega/sq)(-1) at 550 nm wavelengths. The highest conducting and transparency are obtained in the film prepared with 3 wt% Gd doping ratio. Hence, we conclude that 3 wt% ratio is the optimal one required for Gd:SnO2 film production that may found optoelectronic applications, in particular, as window layer in solar cells.
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    Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye
    (Elsevier, 2011) Yakuphanoglu, F.; Ocak, Y. S.; Kilicoglu, T.; Farooq, W. A.
    The electronic parameters and photovoltaic properties of the Au/methylene blue/n-Si diodes were investigated by current-voltage and capacitance-conductance-frequency techniques. The diode exhibits a non-ideal behavior due the series resistance, organic layer and oxide layer. The barrier height (1.04 eV) of the Au/methylene blue/n-Si is higher than that of Au/n-Si Schottky diode (0.83 eV) due to an excess barrier formed by organic layer. The interface state density of the diode was determined using a conductance technique and was found to be 3.25 x 10(12) eV(-1) cm(-2). The diode shows a photovoltaic behavior with a maximum open circuit voltage V-oc of 0.23 V and short-circuit current I-sc of 20.8 mu A under 100 mW/cm(2). It is evaluated that Au/methylene blue/n-Si is an organic-on-inorganic photodiode with the obtained electronic parameters and methylene blue organic dye controls the interface and electrical properties of conventional metal/n-type silicon junction. (C) 2011 Elsevier B.V. All rights reserved.
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    The low resistive and transparent Al-doped SnO2 films: p-type conductivity, nanostructures and photoluminescence
    (ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2014) Benouis, CE; Benhaliliba, M; Mouffak, Z.; Avila-Garcia, A.; Tiburcio-Silver, A.; Lopez, M. Ortega; Trujillo, R. Romano; Ocak, Y. S.
    In this work, we study the crystalline structure, surface morphology, transmittance, optical bandgap and n/p type inversion of tin oxide (SnO2). The Nanostructured films of Al-doped SnO2 were successfully produced onto ITO-coated glass substrates via the spray pyrolysis method at a deposition temperature of 300 degrees C. A (101) and (211)-oriented tetragonal crystal structure was confirmed by X-ray patterns; and grain sizes varied within the range 8 42 nm. The films were polycrystalline, showing a high transparency in the visible (VIS) and infrared (IR) spectra. The optical bandgap was estimated to be around 3.4 eV. The atomic force microscopy (AFM) analysis showed the nanostructures consisting of nanotips, nanopatches, nanopits and nanobubbles. The samples exhibited high conductivity that ranged from 0.55 to 10(4) (S/cm) at ambient and showed an inversion from n to p-type as well as a degenerate semiconductor characters with a bulk concentration reaching 1.7 x 10(19) cm (3). The photoluminescence measurements reveal the detection of violet, green and yellow emissions. (C) 2014 Elsevier B.V. All rights reserved.
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    Microelectronic properties of organic Schottky diodes based on MgPc for solar cell applications
    (Elsevier Science Sa, 2016) Missoum, I.; Ocak, Y. S.; Benhaliliba, M.; Benouis, C. E.; Chaker, A.
    The magnesium phthalocyanine (MgPc) based Schottky diodes are fabricated using four inorganic semiconductors (n-GaAs, n-Si, p-InP, p-Si)by the spin-coating process at 2000 rpm for 1 min. Their microelectronic and photoelectrical parameters are investigated from the current-voltage I -V characteristics measurements at room temperature in dark and under light. The In I -V plots, Cheung and Norde methods are used to extract the MgPc based Schottky diodes parameters in dark, including ideality factor (n), barrier height (mb), series resistance (Rs) and the obtained values are compared. The MgPc/n-Si showed excellent n of 1.1 which is very closer to ideal Schottky diode behavior, high Ob of 0.98 eV and low series resistance of 237.77 Omega in contrast MgPc/p-Si showed non -ideal Schottky diode behavior with n of 2.42 and high series resistance of 1.92 x 10(3) Omega. The MgPcip-InP exhibited photovoltaic behavior with excellent Jsc of 3.11 x 10(3) mA/cm(2) and a photosensitivity of 30.46. The I -V forward bias in log scale have been investigated to survey the dominated conduction mechanism. This study reviews thecrucial effect of (p and n) type conductivity substrates on the electrical parameters of organic MgPc Schottky diodes for the use in such organic photovoltaic applications. (C)2016 Elsevier B.V. All rights reserved.
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    Nanostructured Al Doped SnO2 Films Grown onto ITO Substrate via Spray Pyrolysis Route
    (Sumy State Univ, Dept Marketing & Mia, 2012) Benhaliliba, M.; Benouis, C. E.; Ocak, Y. S.; Yakuphanoglu, F.
    We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 degrees C from the precursor (SnCl4, 5H(2)O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10(-5) Omega.cm, a high electron concentration is around 10(21) cm(-3), and the mobility reaches the value of 20 cm(2)/Vs.
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    A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode
    (Elsevier Science Sa, 2015) Missoum, I.; Benhaliliba, M.; Chaker, A.; Ocak, Y. S.; Benouis, C. E.
    The fabricated Ag/MgPc/n-GaAs/Au-Ge Schottky diode is investigated by using the electrical parameters obtained from the current-voltage (I-V) characteristics measurement at room temperature under dark and light conditions. The Cheung and Norde methods with the I-V characteristics are used to calculate and extract the Schottky diode parameters under dark and light (100 mW/cm(2)) comprising ideality factor n, barrier height (Phi(b)), series resistance (R-s) short circuit current density (J(sc)) and open circuit voltage (V-oc) are respectively found to be 3.64, 0.53 eV, 32.67 Omega, 1.129 mA/cm(2) and 0.35 V. It is seen that the value of R-s and J(sc) are low compared to the literature work which is ascribed to the configuration of Schottky diode structure such as substrate, front and back contacts. Here, we review the contribution to the understanding of magnesium phthalocyanine (MgPc) based Schottky diode for the organic microelectronics applications. (C) 2015 Elsevier B.V. All rights reserved.
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    The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications
    (Elsevier Science Bv, 2015) Tombak, A.; Benhaliliba, M.; Ocak, Y. S.; Kilicoglu, T.
    In the current paper, the physical properties and microelectronic parameters of direct current (DC) sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 degrees C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111)-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144-285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Omega cm and 0.92 to 0.06 cm(2)/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Omega respectively. (C) 2015 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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    Preparation and characterization of nanostructures of in-doped ZnO films deposited by chemically spray pyrolysis: Effect of substrate temperatures
    (Academic Press Ltd- Elsevier Science Ltd, 2013) Benhaliliba, M.; Benouis, C. E.; Mouffak, Z.; Ocak, Y. S.; Tiburcio-Silver, A.; Aida, M. S.; Garcia, A. A.
    We deposited undoped (ZnO) and indium-doped ZnO (IZO) films onto glass substrate via ultrasonic spray pyrolysis technique. The variation in structural, surface morphology, electrical, optical and photoluminescent properties as a function of substrate temperature is investigated. X-rays pattern confirms that as-synthesized IZO phase is grown along a (002) preferential plane. Nanosized grains (<50 nm) are determined by X-ray analysis. Morphology of as-grown films shows broadened nanostructures which have grown along c-axis and nanostructures are found to be smooth (RMS similar to 60 nm). Study by spectrophotometer reveals that the asgrown films are highly transparent in the visible and IR spectra (T similar to 88%), and that the bandgap is slightly narrowed (3.17 eV). Electrical measurements confirm the enhancement of conductivity, rho<1 Omega cm, due to indium incorporation into the starting solution. An electron concentration of 10(17) cm(-3) and a mobility of 3 cm(2)/Vs are found for IZO films grown at 400 degrees C. The photoluminescence analysis demonstrates strong yellow (2.1 eV) and blue (2.8 eV) light and weak green (2.3 eV) emissions. (C) 2013 Elsevier Ltd. All rights reserved.
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    REACTIVELY SPUTTERED MoO3 THIN FILMS AND TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES OF AN Ag/MoO3/n-Si DIODE
    (Natl Inst R&D Materials Physics, 2018) Cebisli, G.; Asubay, S.; Ocak, Y. S.
    MoO3 thin films were deposited onto n-Si and soda lime glass substrates by the reactive sputtering method. The influence of reactive gas flows on the morphological, structural and optical properties of thin films were analyzed by Atomic Force Microscopy (AFM), X-ray Diffraction (XRD) system and UV-Vis data. It was seen that the homogeneity and amorphousness of the films increase with the O-2 ratio. In addition, the Ag/MoO3/n-Si structure was obtained by evaporation of Ag on MoO3/n-Si structure. It was seen that the device had excellent rectification. The electrical properties of Ag/MoO3/n-Si structure were analyzed by current-voltage (I-V) measurements in the dark between 77 and 500 K. It was reported that the temperature had a strong influence on the electrical parameters of the device.