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    EFFECT OF WATER RATIO OF ELECTROLYTE ON THE PROPERTIES OF SI/ANODIC OXIDE INTERFACES
    (Council Scientific Industrial Research, 1993) KILICOGLU, T; OZTURK, ZZ; EBEOGLU, MA; GULSUN, Z
    In order to study the effect of water ratio on the properties of Si/anodic oxide (AO) interface, metal-oxide-semiconductor capacitors have been used. Anodic oxide films were grown under constant current conditions by using 0.034 M NH4NO3, solution in methanol and its solutions diluted with deionized water of 2 and 10 per cent. The small signal capacitance and conductance of MOS were measured as a function of the bias at both room temperature and at 77 K. The analysis of the C-V curves showed a maximum of interface states of different values in lower-half of the band gap at room temperature, while this maximum was missing at 77 K. This maximum may be due to the unsaturated dangling bonds of the interfaces.
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    Öğe
    EFFECTS OF ELECTROLYTE PH ON ELECTRICAL-PROPERTIES OF THE INTERFACE BETWEEN N-INSB AND ITS ANODIC NATIVE-OXIDE
    (Council Scientific Industrial Research, 1995) KILICOGLU, T; OZTURK, ZZ; EBEOGLU, MA; TURUT, A; OZDEMIR, M; ALTINDAL, A
    An investigation has been made of the effects of different pH values of a new electrolyte on the electrical properties of n-type InSb/anodic oxide film structures (MOS). This electrolyte (ACC) consist of 300 mi ethylene glycol: 5-6 ml H2O (18M Omega DI): 7 g diammonium hydrogen citrate. The anodic oxidation is carried out under a constant current density. The interface properties have been determined using C-V characteristics of the MOS structures. The MOS capacitance is measured by a lock-in amplifier technique at 77 K in the frequency range 1 to 100 kHz. Furthermore, from the relation between the applied voltage steady-state current at room temperature, it has been seen that the dependence of the current on the voltage differs from sample to sample. The interface hysteresis state densities for the InSb MOS structure corresponding to each pH value of the electrolyte are calculated. These values are in close agreement with those reported by other workers. These values, in device applications of InSb, seem to be satisfactory especially for the sample formed with pH = 7 of this electrolyte.