Yazar "Ebeoglu, M. A." seçeneğine göre listele

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    Öğe
    The effect of a novel organic compound chiral macrocyclic tetraamide-I interfacial layer on the calculation of electrical characteristics of an Al/tetraamide-I/p-Si contact
    (Elsevier Science Sa, 2007) Kilicoglu, T.; Aydina, M. E.; Topal, G.; Ebeoglu, M. A.; Saygili, H.
    The Al/tetraamide-I/p-Si Schottky barrier diode (SBD) has been prepared by adding a solution of a novel nonpolymeric organic compound chiral macrocylic tetraamide-I in chloroform on top of a p-Si substrate and then evaporating the solvent. It has been seen that the forward-bias current-voltage (I-V) characteristics of Al/tetraamide-I/p-Si SBD with a barrier height value of 0.75 eV and an ideality factor value of 1.77 showed rectifying behaviour. The energy distribution of the interface state density determined from I-V characteristics increases exponentially with bias from 5.81 x 10(12) cm(-2) eV(-1) at (0.59-E-v) eV to 1.02 x 10(13) cm(-2) eV(-1) at (0.40-E-v) eV. It has showed that space charge limited current (SCLC) and trap charge limited current (TCLC) are the dominant transport mechanisms at large forward-bias voltages. (C) 2007 Elsevier B.V. All rights reserved.
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    Öğe
    Low- and high-frequency C-V characteristics of the contacts formed by adding a solution of the nonpolymeric organic compound on p-type Si substrate
    (Elsevier, 2007) Ebeoglu, M. A.; Kilicoglu, T.; Aydin, M. E.
    Al/quercetin/p-Si Schottky barrier diodes (SBDs) have been fabricated by adding a solution of the nonpolymeric organic compound quercetin in ethanol on top of p-Si substrate, and then evaporating the solvent. The quercetin/p-Si contact shows rectifying behaviour and the reverse curve exhibit a weak bias voltage dependence. Barrier height and ideality factor value of 0.86 and 1.06eV, respectively, for the device have been determined from the forward bias current-voltage (I-V)characteristics. The energy distribution of the interface state density located in the semiconductor band gap at quercetin/p-Si interface ranges from 2.12 x 10(12) cm(12) eV(-1) in (0.680-E-v)eV to 4.68 x 10(11) cm(-2) eV(-1) in (0.813-E-v) eV have been determined from the I-Vand the capacitance-voltage (C-V) characteristics (high-and low frequency). The interface state density has an exponential rise with bias from the midgap towards the top of the valence band. (C) 2007 Elsevier B.V. All rights reserved.
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    Öğe
    Temperature dependent electrical characteristics of an organic-inorganic heterojunction obtained from a novel organometal Mn complex
    (Elsevier Science Bv, 2010) Ocak, Y. S.; Ebeoglu, M. A.; Topal, G.; Kilicoglu, T.
    This study includes synthesizing a Mn hexaamide (MnHA) organometal compound (C(27)H(21)N(9)O(6)MnCl(2)). (1/2H(2)O), fabrication of MnHA/n-Si organic-inorganic heterojunction and analysis of conduction mechanism of the device over the room temperature. After synthesizing the molecule, the structure of the compound was determined using spectroscopic methods. The Sn/MnHA/n-Si structure was constructed by forming a thin MnHA layer on n-Si inorganic semiconductor and evaporating Sn metal on organic complex. The structure has shown good rectifying behavior and obeys the thermionic emission theory. The current-voltage (I-V) characteristics of the diode have been measured at temperatures ranging from 300 to 380K at 10 K intervals to determine the temperature dependent electrical characteristics of the device. (C) 2010 Elsevier B.V. All rights reserved.