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    Annealing-induced characterization of sputtered V2O5 thin films and Ag/ V2O5/p-Si heterojunctions
    (Elsevier, 2024) Aljawrneh, Bashar; Ocak, Yusuf Selim; Albiss, Borhan Aldeen
    V2O5 thin films were deposited on glass and p-type silicon substrates by radio frequency (RF) sputtering of a single V2O5 target. Half of the samples were annealed at 500 degrees C at room ambient for an hour. The morphological, structural, and optical properties of the thin films were analyzed by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-Vis data. The results showed that while the asgrown V2O5 thin films had smooth surfaces with an amorph phase, annealed films had rougher surfaces with grains in the polycrystalline phase. It is also reported that the band gap of V2O5 thin films decreased from 2.47 to 2.37 eV. Furthermore, the electrical properties of Ag/V2O5/p-Si junctions were analyzed by current-voltage (I-V) measurements. It was presented that both Ag/V2O5/p-Si structures with as-grown and annealed V2O5 thin films had exciting rectifying behaviors. It was observed that while the barrier heights of the rectifying junctions were nearly the same, the ideality factor and series resistance values of the Ag/V2O5/p-Si device fabricated by annealed V2O5 thin film were higher than the device with as grown V2O5 thin film. Finally, the photoelectrical properties of both samples were analyzed by I-V under various light intensities. It was seen that both Ag/V2O5/pSi devices had exciting photosensing behavior. While the increase in reverse bias current values with the increase in light intensity was observed for both devices, it was seen that the device obtained by as-grown thin film had much more sensitivity to light.
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    Electrical and photoelectrical characterization of Au/n-Si diode with sputtered ZrO2 interlayer
    (Springer, 2023) Obaid, Masoud Giyathaddin; Ocak, Yusuf Selim; Albiss, Borhan Aldeen; Benhaliliba, Mostefa
    ZrO2 thin films were deposited on n-Si and quartz substrates by a reactive sputtering technique. The morphological and optical characterization of a sputtered ZrO2 thin film revealed a highly smooth surface with 1.5 nm roughness and optical band gap value of 5.7 eV. An Au/ZrO2/n-Si metal–insulator-semiconductor (MIS) structure was obtained by evaporation of the Au on ZrO2/n-Si structure. The electrical properties analyzed by current–voltage (I-V) measurements in the dark showed that the device had 5. 094 ideality factor, 0.808 eV barrier height, and 50 Ω series resistance values. The C-V measurements showed that the device could not follow the AC signals at higher frequencies owing to the interface states, and the barrier height value calculated using C-V data (0.916 eV) is higher than the one obtained from the I-V plot. The photoelectrical parameters were determined by I-V measurements at various light intensities. The findings proved that the photoelectrical parameters of the MIS device had a photosensing behavior.
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    Electro-deposited halloysite nanotube/polyaniline nanocomposites for energy storage applications
    (Elsevier B.V., 2023) Aljawrneh, Bashar; Albiss, Borhan Aldeen; Rahman, Mohammad Abdel; Ocak, Yusuf Selim
    A nanocomposite (nanoclay/conductive polymer) was prepared by a template-free method for supercapacitor applications. Halloysite Nanotubes (HNTs) were used as a nanoclay material, and synthesized polyaniline (PANI) by ammonium persulfate-initiated polymerization was used as a conductive polymer. The HNTs/PANI nanocomposite was deposited on an indium tin oxide (ITO) coated glass to obtain a working electrode by an electrochemical deposition method. Morphological and structural examination of the HNTs/PANI nanocomposite proved that the PANI nanoparticles were attached to the HNTs surface. The structural analysis demonstrated that the PANI and HNTs crystal size significantly decreased in the HNTs/PANI as a result of the composition of PANI molecules with HNTs structure. The main characteristic bonds and functional groups of HNT, PANI, and HNTs/PANI nanocomposites were determined by FT-IR analysis. Using cyclic voltammetry (CV), the electrochemical performance of the HNTs//PANI nanocomposite electrode was investigated. The specific capacitance values were reported via the CV curves as 264, 230.22, 175.2, and 154.8 F/g at scan rates of 50, 100, 200, and 300 mV/s respectively. The results showed that the specific capacitance at the slow scan rates revealed higher maximum specific capacitance values.