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    THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE
    (World Scientific Publ Co Pte Ltd, 2017) Ejderha, Kadir; Asubay, Sezai; Yildirim, Nezir; Gullu, Omer; Turut, Abdulmecit; Abay, Bahattin
    The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current-voltage (I-V) characteristics have been measured in the sample temperature range of 100-400K with steps of 20 K. The characteristic parameters of both Ti/ p-InP SDs have been compared with each other. The barrier height (BH) values of 0.824 and 0.847 at 300K have been obtained for the sputtered and the evaporated SDs, respectively. This low BH value for the sputtered SD has been attributed to some defects introduced by the sputtered deposition technique over a limited depth in to the p-type substrate. The BH of the evaporated and sputtered diodes has decreased with the standard deviations of 58 and 64mV obeying to double-Gaussian distribution (GD) in 220-400K range, respectively, and it has seen a more sharper reduction for the BHs with the standard deviations of 93 and 106 mV in 100-220K range. The Richardson constant values of 89.72 and 53.24 A(Kcm)(-2) (in 220-400K range) for the evaporated and sputtered samples, respectively, were calculated from the modiified ln(I-0/T-2) - q(2)sigma(2)(s)/2k(2)T(2) vs (kT)(-1) curves by GD of the BHs. The value 53.24A (Kcm)(-2) for the sputtered sample in high temperatures range is almost the same as the known Richardson constant value of 60 A(Kcm)(-2) for p-type InP.
  • [ X ]
    Öğe
    Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
    (Amer Inst Physics, 2007) Aydin, Mehmet Enver; Yildirim, Nezir; Tueruet, Abdulmecit
    The current-voltage (I-V) characteristics of Ni/4H-nSiC Schottky diodes have been measured in the temperature range of 180-300 K with a temperature step of 20 K. An experimental barrier height (BH) Phi(ap) value of about 1.32 eV was obtained for the Ni/4H-nSiC Schottky diode at the 300 K. A decrease in the experimental BH Phi(ap) and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal-semiconductor interface. (Phi) over bar (b) and A(*) as 1.71 eV, and 156.3 A/cm(2) K-2, respectively, have been calculated from a modified ln(I-0/T-2)-q(2)sigma(2)(s)/2k(2)T(2) vs 1/T plot using the temperature-dependent experimental I-V characteristics of the Ni/4H-nSiC contact. The Richardson constant value of 156.3 A/cm(2) K-2 is in close agreement with 146 A/cm(2) K-2 known for 4H-nSiC. (C) 2007 American Institute of Physics.