Yazar "Topal, G." seçeneğine göre listele

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    Öğe
    60Co ?-irradiation effects on electrical properties of a rectifying diode based on a novel macrocyclic Zn octaamide complex
    (Elsevier, 2010) Ocak, Y. S.; Kilicoglu, T.; Topal, G.; Baskan, M. H.
    C36H28N12O8ZnC12 center dot 9/2H(2)O, Zn-octaamide (ZnOA) macrocyclic compound was synthesized to be used in the fabrication of electronic and photoelectronic devices. The structure of new compound was identified by using H-1 NMR, C-13 NMR, IR, UV-vis and LC-MS spectroscopic methods. The Sn/ZnOA/n-Si/Au structure was engineered by forming a thin macrocyclic organic compound layer on n-Si inorganic substrate and then by evaporating Sn metal on the organic layer. It was seen that the device had a good rectifying behaviour and showed Schottky diode properties. The diode was irradiated under Co-60 gamma-source at room temperature. Characteristic parameters of the diode were determined from its currentvoltage (I-V) and capacitance voltage (C-V) measurements before and after irradiation. It was observed that gamma-irradiation had clear effects on I-V and C-V properties. Also, it was seen that the barrier height, the ideality factor and the series resistance values decreased after the applied radiation, while the saturation current value increased. (C) 2009 Elsevier B.V. All rights reserved.
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    Öğe
    The effect of a novel organic compound chiral macrocyclic tetraamide-I interfacial layer on the calculation of electrical characteristics of an Al/tetraamide-I/p-Si contact
    (Elsevier Science Sa, 2007) Kilicoglu, T.; Aydina, M. E.; Topal, G.; Ebeoglu, M. A.; Saygili, H.
    The Al/tetraamide-I/p-Si Schottky barrier diode (SBD) has been prepared by adding a solution of a novel nonpolymeric organic compound chiral macrocylic tetraamide-I in chloroform on top of a p-Si substrate and then evaporating the solvent. It has been seen that the forward-bias current-voltage (I-V) characteristics of Al/tetraamide-I/p-Si SBD with a barrier height value of 0.75 eV and an ideality factor value of 1.77 showed rectifying behaviour. The energy distribution of the interface state density determined from I-V characteristics increases exponentially with bias from 5.81 x 10(12) cm(-2) eV(-1) at (0.59-E-v) eV to 1.02 x 10(13) cm(-2) eV(-1) at (0.40-E-v) eV. It has showed that space charge limited current (SCLC) and trap charge limited current (TCLC) are the dominant transport mechanisms at large forward-bias voltages. (C) 2007 Elsevier B.V. All rights reserved.
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    Öğe
    Temperature dependent electrical characteristics of an organic-inorganic heterojunction obtained from a novel organometal Mn complex
    (Elsevier Science Bv, 2010) Ocak, Y. S.; Ebeoglu, M. A.; Topal, G.; Kilicoglu, T.
    This study includes synthesizing a Mn hexaamide (MnHA) organometal compound (C(27)H(21)N(9)O(6)MnCl(2)). (1/2H(2)O), fabrication of MnHA/n-Si organic-inorganic heterojunction and analysis of conduction mechanism of the device over the room temperature. After synthesizing the molecule, the structure of the compound was determined using spectroscopic methods. The Sn/MnHA/n-Si structure was constructed by forming a thin MnHA layer on n-Si inorganic semiconductor and evaporating Sn metal on organic complex. The structure has shown good rectifying behavior and obeys the thermionic emission theory. The current-voltage (I-V) characteristics of the diode have been measured at temperatures ranging from 300 to 380K at 10 K intervals to determine the temperature dependent electrical characteristics of the device. (C) 2010 Elsevier B.V. All rights reserved.