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    Characterization of an Au/n-Si photovoltaic structure with an organic thin film
    (Elsevier Sci Ltd, 2013) Ozaydin, C.; Akkilic, K.; Ilhan, S.; Ruzgar, S.; Gullu, O.; Temel, H.
    We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Phi(b) of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 k Omega and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 mu A under light of 8 mW/cm(2). (C) 2013 Elsevier Ltd. All rights reserved.
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    Öğe
    Electrical Characterization of Au/Quercetin/n-Si Heterojunction Diode and Optical Analysis of Quercetin Thin Film
    (Amer Inst Physics, 2016) Tombak, Ahmet; Ozaydin, C.; Boga, M.; Kilicoglu, T.
    Quercetin (3,5,7,3',4'-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio, barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm(2) illumination conditions.
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    Öğe
    The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application
    (Pergamon-Elsevier Science Ltd, 2016) Ozaydin, C.; Gullu, O.; Pakma, O.; Ilhan, S.; Akkilic, K.
    In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Phi(b)) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit' voltage of 396 mV and a short circuit current of 33.8 mu A under 300W light. (C) 2016 Elsevier Ltd. All rights reserved.