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    Öğe
    Characterization of synthesized new chitin derivatives and Schottky diodes made using these derivatives
    (Springer, 2020) Uzun, Ilhan; Orak, Ikram; Karakaplan, Mehmet; Yagmur, Hatice Karaer; Yalcin, Serife Pinar; Akkilic, Kemal
    In this study, two new chitin derivatives were firstly synthesized. The products formed as a result of the reactions between chitin with 4-bromo-1,8-naphthalic anhydride and 4,4 '-oxydiphthalic anhydride were abbreviated as C4B18NA and C44 ' OA, respectively. The structures of the chitin derivatives were illuminated by various spectroscopic methods (FTIR, NMR, and XRD), and it was thus confirmed that they were synthesized. The surface structures of the chitin derivatives were investigated by SEM technique. Then, two separate diodes were made using aluminum as metal, the chitin derivatives as interfacial layer, and p-Si as semiconductor. Some important properties of the diodes made were determined both in the dark and under an illumination of 100 mW/cm(2). It was seen that the diodes are more ideal than most of the diodes where aluminum and p-type silicon were used as metal and semiconductor in their structures, respectively.
  • [ X ]
    Öğe
    Determination of Electrical and Photoelectrical Properties of Schottky Diodes Made Using New Chitin Derivatives Synthesized as Interface Layer
    (Springer, 2021) Uzun, Ilhan; Orak, Ikram; Yagmur, Hatice Karaer; Karakaplan, Mehmet; Yalman, Murat
    5-(2,4-dichlorophenyl)-2-furoic acid and anthraquinone-2-carboxylic acid were reacted separately with chitin. The synthesized products were characterized by various spectroscopic methods (FTIR, NMR and XRD) and were abbreviated as C524D2FA and CA2CA, respectively. The surface of the chitin derivatives, pulverized by pounding in mortar, was examined by SEM technique. Then, two different diodes were made by using these chitin derivatives as an interface layer. Al as metal and p-Si as semiconductor were used in the construction of the diodes. Some important properties of these diodes made were determined both in the dark and under an illumination of 100 mW/cm(2). The Al/CA2CA/p-Si diode has been found to be more ideal than the Al/C524D2FA/p-Si diode conducted in this study and many other diodes made using Al and p-Si in other studies up to now.