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    Öğe
    AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters
    (Sumy State Univ, Dept Marketing & Mia, 2015) Benhaliliba, M.; Ocak, Y. S.; Mokhtari, H.; Kilicoglu, T.
    In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm - 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO / pSi/Al Schottky is determined and found to be 1012 (eV.cm(2))(-1). Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 angstrom and 0.28 m.
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    Öğe
    Spectroscopic ellipsometry, optical, structural and electrical investigation of sprayed pure and Sn-doped ZnO thin films
    (E D P Sciences, 2012) Mokhtari, H.; Benhaliliba, M.; Aida, M. S.; Attaf, N.; Ocak, Y.
    in this work, we report the transparent pure and Sn-doped zinc oxide (ZnO). The films were deposited onto microscope glass substrate which was heated at 350+/-5C degrees by ultrasonic spray pyrolysis (U S P) deposition technique. The concentrations of Sn were selected within the range of 0-3% by step of 0.5% and the time deposition is kept at 5 min. A (002)-oriented wurtzite crystal structure was confirmed by X-rays patterns; and grain size varied within the range 7.37-14.84nm, and cristanillity is calculated goes from14.4 to 45.9%. Based on UV-VIS-IR analysis, the results revealed the high transparency of the sprayed films which exceeds 90%. The band gap energy was of 3.26-3.30 eV. The film thickness was estimated by spectroscopy ellipsometry and the found values were of 165-270nm. The refractive index is in the range of 2.75. The obtained electrical parameters were around 10(18) cm(-3), 3.6 cm(2)/Vs, 1.6 Omega.cm; 5.8cm(3)/C. finally the Sn-doping has influenced the physical parameters of as-ground ZnO films
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    Öğe
    Synthesis and Properties of Au/PVP/p-Si/Al Heterojunction Diode
    (Ieee, 2014) Benhaliliba, M.; Ocak, Y. S.; Mokhtari, H.; Benouis, C. E.
    Properties of heterojunction diodes having polyvinyl pyrrolidone (PVP) on p-Si substrate are investigated. PVP layer has grown onto p type silicon substrate via the sol gel spin coating route @ 2000 rpm. The Front contacts have been thermally evaporated in vacuum onto the organic layer at low pressure of 10-6 T, having a diameter of 1.5 mm and a thickness around 250 +/- 10 nm. In this research, the electronic parameters of Au/PVP/p-Si/Al structures have been investigated. The obtained values indicate that the electronic parameters of the diode, like ideality factor (n), saturation current, barrier height (Phi(B)), and rectification coefficient (R) are respectively found to be (in dark) 2.2, 0.8 mu A, 0.61 V, and 1.85x10(4). The open circuit voltage V-OC is about 0.2 V. A non-diode ideal behavior is observed and ideality factor exceeds the unity (n> 5). Consequently, V-OC only depends on the solar cell material. We fabricate the device in the aim to use it in solar cell, photodiode and photoconductor applications.