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    Öğe
    Microelectronic properties of organic Schottky diodes based on MgPc for solar cell applications
    (Elsevier Science Sa, 2016) Missoum, I.; Ocak, Y. S.; Benhaliliba, M.; Benouis, C. E.; Chaker, A.
    The magnesium phthalocyanine (MgPc) based Schottky diodes are fabricated using four inorganic semiconductors (n-GaAs, n-Si, p-InP, p-Si)by the spin-coating process at 2000 rpm for 1 min. Their microelectronic and photoelectrical parameters are investigated from the current-voltage I -V characteristics measurements at room temperature in dark and under light. The In I -V plots, Cheung and Norde methods are used to extract the MgPc based Schottky diodes parameters in dark, including ideality factor (n), barrier height (mb), series resistance (Rs) and the obtained values are compared. The MgPc/n-Si showed excellent n of 1.1 which is very closer to ideal Schottky diode behavior, high Ob of 0.98 eV and low series resistance of 237.77 Omega in contrast MgPc/p-Si showed non -ideal Schottky diode behavior with n of 2.42 and high series resistance of 1.92 x 10(3) Omega. The MgPcip-InP exhibited photovoltaic behavior with excellent Jsc of 3.11 x 10(3) mA/cm(2) and a photosensitivity of 30.46. The I -V forward bias in log scale have been investigated to survey the dominated conduction mechanism. This study reviews thecrucial effect of (p and n) type conductivity substrates on the electrical parameters of organic MgPc Schottky diodes for the use in such organic photovoltaic applications. (C)2016 Elsevier B.V. All rights reserved.
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    Öğe
    A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode
    (Elsevier Science Sa, 2015) Missoum, I.; Benhaliliba, M.; Chaker, A.; Ocak, Y. S.; Benouis, C. E.
    The fabricated Ag/MgPc/n-GaAs/Au-Ge Schottky diode is investigated by using the electrical parameters obtained from the current-voltage (I-V) characteristics measurement at room temperature under dark and light conditions. The Cheung and Norde methods with the I-V characteristics are used to calculate and extract the Schottky diode parameters under dark and light (100 mW/cm(2)) comprising ideality factor n, barrier height (Phi(b)), series resistance (R-s) short circuit current density (J(sc)) and open circuit voltage (V-oc) are respectively found to be 3.64, 0.53 eV, 32.67 Omega, 1.129 mA/cm(2) and 0.35 V. It is seen that the value of R-s and J(sc) are low compared to the literature work which is ascribed to the configuration of Schottky diode structure such as substrate, front and back contacts. Here, we review the contribution to the understanding of magnesium phthalocyanine (MgPc) based Schottky diode for the organic microelectronics applications. (C) 2015 Elsevier B.V. All rights reserved.