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    Modeling of Ti doped CuO/ZnO/AZO thin film solar cell
    (Nova Science Publishers, Inc., 2024) Candan, Ilhan; Baturay, Silan; Gezgin, Serap Yigit; Kilic, Hamdi Sukur
    The CuO thin film in the IV group was grown on a glass substrate using a spin coating technique by doping 2% Ti. The optical properties of these films were characterized using ultraviolet-visible (UV-Vis) spectrophotometry. UV-Vis measurements show that the absorption and energy band gap value of Ti: CuO thin films change due to the different crystal structures of the films. Solar cells based on undoped CuO and Tidoped CuO thin films were modeled using the SCAPS-1D simulation program. Depending on the interface defect density, the values of photovoltaic parameters of the solar cells decreased. An increase in the efficiency of the Ti-doped CuO solar cell was observed with the increase in the hole mobility, but it showed lower performance compared to the undoped CuO solar cell. While the undoped CuO solar cell showed quantum efficiency in the narrow visible region close to the UV region, the Ti-doped CuO solar cell contributed to the quantum efficiency in the wider visible region. As a result of the calculations carried out with the simulation program, it was observed that the Ti atom caused a decrease in the efficiency of the CuO solar cell.. © 2024 Nova Science Publishers, Inc. All rights reserved.
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    Öğe
    Production of Cu2SnS3 thin films depending on the sulphur flow rate and annealing temperature time
    (Natl Inst Optoelectronics, 2023) Candan, Ilhan; Gezgin, Serap Yigit; Baturay, Silan; Kilic, Hamdi Sukur
    Cu2SnS3 thin films have been produced using spin coating method for 30 and 40 sccm sulphur flux rate during three annealing times of 15, 30 and 60 minutes at 550 degrees C. Crystal properties, morphological structure, phase structure, elemental contents and optical properties of Cu2SnS3 thin films have comprehensively been studied by XRD, SEM, Raman, EDX, UV-vis, and photoluminescence analysis, respectively. The crystalline size, dislocation density, microstrain and crystalline number of Cu2SnS3 thin films have been calculated. Cu2SnS3-A2 thin film annealed for 30 minutes has the best crystal structure. Cu2SnS3 thin films contain four different phases depending on sulphur flux rate and the annealing temperature duration. In addition, their band gaps, extinction coefficients and Urbach energies were determined. The refractive index and high frequency dielectric constant of Cu2SnS3 thin film were calculated using Herve and Vandamme, Moss and Ravindra relations and the values found were found to be compatible with one another. The skin depth and optical conductivity of Cu2SnS3 thin films were obtained. While the photon energy increased, their skin depth decreased and the optical conductivity considerably increased.