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The calculation of electronic parameters of an Au/?-carotene/n-Si Schottky barrier diode
(Elsevier, 2006) Aydin, M. E.; Kilicoglu, T.; Akkilic, K.; Hosgoren, H.
An Au/beta-carotene/n-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound beta-carotene in chloroform on top of an n-Si substrate, and then evaporating the solvent. The beta-carotene/n-Si contact shows rectifying behaviour and the reverse curves exhibit a weak bias voltage dependence. The barrier height and ideality factor values of 0.80 eV and 1.32, respectively for this structure, have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range (E-c-0.76) to (E-c-0.53) eV have been determined from the I-V characteristics. The interface state density N-ss ranges from 5.84 x 10(12) cm(-2) eV(-1) in (E-c-0.76) eV to 8.83 x 10(13) cm(-2) eV(-1) in (E-c-0.53)eV. The interface state density has an exponential rise with bias from the mid-gap towards the bottom of the conduction band. (c) 2006 Elsevier B.V. All rights reserved.