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  • Küçük Resim
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    Investigation of the structural and morphological features of TiO2:8OBA composites for MIS semiconductor diodes
    (Elsevier Ltd, 2023) Güllü, Ömer; Okumuş, Mustafa; Ava, Canan Aytuğ
    In this study, a liquid crystal 8OBA-doped TiO2 composite was formed on a p-Si substrate using the ultrasonic spray coating method. The characterization of the un-doped and doped films produced was carried out by SEM-EDS, XRD and UV–vis measurements. SEM/EDS analysis showed that the TiO2:8OBA composite completed the formation of a layer on the glass surface and exhibited a homogeneous distribution throughout the surface. XRD analysis of TiO2:8OBA composites showed that anatase and rutile crystal phases are belonging to TiO2 and C[sbnd]H based phase indicating 8OBA. In addition, as a result of UV–vis analysis, the optical band gap of 8OBA:TiO2 composite was calculated as 2.82 eV. Besides, the diode application of 8OBA doped and un-doped TiO2 thin film was performed. Charge transport processes of the diode were studied in detail by taking current–voltage measurements. The ideality factor, barrier height, series resistance and parallel resistance values were extracted using different methods.
  • Küçük Resim
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    Structural and electronic characterization of silicon based MIS contact by xanthene dye molecules (Erythrosine B)
    (Elsevier B.V., 2023) Sunkur, Murat; Ava, Canan Aytuğ; Güllü, Ömer
    The effect of erythrosine B (ERY) organic material as an interface layer on the electronic characteristics of the Al/p-Si junction is examined in the present work. AFM, NMR, UV–Vis and FTIR measurements have been conducted on the ERY dye molecule. The ERY film on the surface of the substrate is coated with nanoparticles, according to the surface analysis performed using the AFM technique. The basic diode parameters of Al/p-Si and Al/ERY/p-Si junctions were measured by utilizing current-voltage (I–V) and capacitance-voltage (C-V) techniques. The junctions with and without organic interfacial layers were found to have ideality factors of 1.931 and 1.925, respectively. For MS and MIS contacts, the estimated values of barrier height were 0.592 eV and 0.937 eV, respectively. Additionally, the series resistances for the MS and MIS structures by utilizing Norde function, were determined to be 0.14 kΩ and 322.85 kΩ, respectively. In addition, the reverse bias 1/C2-V characteristics were used to analyze the barrier height values and compare the findings to those from I-V method. The experimental findings demonstrated that the Al/ERY/p-Si MIS diode has a barrier height that is remarkably greater than that of the reference Al/p-Si junction. Placement of the ERY dye interlayer between a metal and a semiconductor could enhance and regulate the performance and characteristic of these types of junctions.