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Öğe Ac conductivity and impedance spectroscopy study and dielectric response of MgPc/GaAs organic heterojunction for solar energy application(Elsevier, 2020) Benhaliliba, M.; Asar, T.; Missoum, I; Ocak, Y. S.; Ozcelik, S.; Benouis, C. E.; Arrar, A.The study concerns the C/omega-V performances and examination of dielectric response of MgPc/GaAs organic heterojunction (OHJ) structure of solar energy applications. Throughout this work, many characterizations have been achieved and various parameters have been extracted. C/omega-V and G/omega-V plots are subject to give much knowledge about the mechanism and behavior inside the OHJ. It is revealed that capacitance of OHJ increases with voltage defining deep depletion (dd), depletion (dep) and accumulation (ac) regions. Besides, Ac conductivity at room temperature increases with frequency in particular within the forward biasing voltage, reaching a high point of 28 x 10(-7) S/cm at 5 V. Real and imaginary terms of complex dielectric constant or well known by permittivity, epsilon versus ln omega are studied inside the 1.5V-2.5 V range. The real and imaginary parts of the impedance are found to be frequency dependence within the 1.5 V and 2.5 V bias range. Ac current conductivity sigma(Ac) against frequency (ln omega) of MgPc/GaAs OHJ inside 1.5V-2.5 V bias voltage range is well detailled; the average of conductivity about 8 x 10(-7) S/cm is then recorded. The impedance spectroscopy study is evidenced by the complex impedance M where real and imaginary part are M' and M ''. Profile of M' and M '' as function of voltage exhibits peaks for 3 kHz-300kHz frequency range. It is indicated that M '' and M' are roughly comprised between 0.08 and 1.12 and 0 and 2 respectively. Conduction mechanism is then determined by ln sigma-ln omega plots. The Cole-Cole diagram displays different curves of impedance as distinct semicircle for measured frequencies.Öğe AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters(Sumy State Univ, Dept Marketing & Mia, 2015) Benhaliliba, M.; Ocak, Y. S.; Mokhtari, H.; Kilicoglu, T.In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm - 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO / pSi/Al Schottky is determined and found to be 1012 (eV.cm(2))(-1). Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 angstrom and 0.28 m.Öğe Characterization of Coated Fe-Doped Zinc Oxide Nanostructures(Sumy State Univ, Dept Marketing & Mia, 2013) Benhaliliba, M.; Ocak, Y. S.; Tab, A.The nanostructures of iron-doped zinc oxide (FZO) produced by a simple and low cost dip-coating route onto a glass substrate were studied. The structural, morphological, electrical and optical properties of FZO films were investigated. Nanochains were revealed by SEM analysis at high magnification. A (002)-oriented wurzite structure with a lattice parameter of a = 3.24 angstrom and c= 5.19 angstrom was confirmed byX-rays diffraction. High transmittance was exhibited in the visible spectrum, T (550 nm) > 83 %. Finally, electrical measurements revealed a resistivity and mobility of 10 k Omega.cm, and 5 cm(2)/Vs respectively.Öğe Effect of Metal on Characteristics of MPc Organic Diodes(Sumy State Univ, Dept Marketing & Mia, 2014) Benhaliliba, M.; Ocak, Y. S.; Benouis, C. E.The fabrication and electrical characterization of metal phthalocyanine MPc organic diodes have been investigated. The Au / MPc / Si Schottky diodes are fabricated via a spin coating route. Based on the electrical measurement of the current versus bias voltage in dark conditions we extract the parameters such as ideality factor, saturation current, series resistance and rectifying factor. Role of metal M. Cu, Al, Zn, Mg on the electronic parameters is emphasized. The obtained values of n, 1.85, 2.22 and 4.40, show a non-ideal behavior. Using a derivate dV / dlnI and H(I) functions, we determine the ideality factor and series resistance and found to be 2 and 17 Omega for the CuPc device.Öğe Microelectronic properties of organic Schottky diodes based on MgPc for solar cell applications(Elsevier Science Sa, 2016) Missoum, I.; Ocak, Y. S.; Benhaliliba, M.; Benouis, C. E.; Chaker, A.The magnesium phthalocyanine (MgPc) based Schottky diodes are fabricated using four inorganic semiconductors (n-GaAs, n-Si, p-InP, p-Si)by the spin-coating process at 2000 rpm for 1 min. Their microelectronic and photoelectrical parameters are investigated from the current-voltage I -V characteristics measurements at room temperature in dark and under light. The In I -V plots, Cheung and Norde methods are used to extract the MgPc based Schottky diodes parameters in dark, including ideality factor (n), barrier height (mb), series resistance (Rs) and the obtained values are compared. The MgPc/n-Si showed excellent n of 1.1 which is very closer to ideal Schottky diode behavior, high Ob of 0.98 eV and low series resistance of 237.77 Omega in contrast MgPc/p-Si showed non -ideal Schottky diode behavior with n of 2.42 and high series resistance of 1.92 x 10(3) Omega. The MgPcip-InP exhibited photovoltaic behavior with excellent Jsc of 3.11 x 10(3) mA/cm(2) and a photosensitivity of 30.46. The I -V forward bias in log scale have been investigated to survey the dominated conduction mechanism. This study reviews thecrucial effect of (p and n) type conductivity substrates on the electrical parameters of organic MgPc Schottky diodes for the use in such organic photovoltaic applications. (C)2016 Elsevier B.V. All rights reserved.Öğe Nanostructured Al Doped SnO2 Films Grown onto ITO Substrate via Spray Pyrolysis Route(Sumy State Univ, Dept Marketing & Mia, 2012) Benhaliliba, M.; Benouis, C. E.; Ocak, Y. S.; Yakuphanoglu, F.We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 degrees C from the precursor (SnCl4, 5H(2)O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10(-5) Omega.cm, a high electron concentration is around 10(21) cm(-3), and the mobility reaches the value of 20 cm(2)/Vs.Öğe A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode(Elsevier Science Sa, 2015) Missoum, I.; Benhaliliba, M.; Chaker, A.; Ocak, Y. S.; Benouis, C. E.The fabricated Ag/MgPc/n-GaAs/Au-Ge Schottky diode is investigated by using the electrical parameters obtained from the current-voltage (I-V) characteristics measurement at room temperature under dark and light conditions. The Cheung and Norde methods with the I-V characteristics are used to calculate and extract the Schottky diode parameters under dark and light (100 mW/cm(2)) comprising ideality factor n, barrier height (Phi(b)), series resistance (R-s) short circuit current density (J(sc)) and open circuit voltage (V-oc) are respectively found to be 3.64, 0.53 eV, 32.67 Omega, 1.129 mA/cm(2) and 0.35 V. It is seen that the value of R-s and J(sc) are low compared to the literature work which is ascribed to the configuration of Schottky diode structure such as substrate, front and back contacts. Here, we review the contribution to the understanding of magnesium phthalocyanine (MgPc) based Schottky diode for the organic microelectronics applications. (C) 2015 Elsevier B.V. All rights reserved.Öğe The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications(Elsevier Science Bv, 2015) Tombak, A.; Benhaliliba, M.; Ocak, Y. S.; Kilicoglu, T.In the current paper, the physical properties and microelectronic parameters of direct current (DC) sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 degrees C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111)-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144-285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Omega cm and 0.92 to 0.06 cm(2)/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Omega respectively. (C) 2015 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).Öğe Preparation and characterization of nanostructures of in-doped ZnO films deposited by chemically spray pyrolysis: Effect of substrate temperatures(Academic Press Ltd- Elsevier Science Ltd, 2013) Benhaliliba, M.; Benouis, C. E.; Mouffak, Z.; Ocak, Y. S.; Tiburcio-Silver, A.; Aida, M. S.; Garcia, A. A.We deposited undoped (ZnO) and indium-doped ZnO (IZO) films onto glass substrate via ultrasonic spray pyrolysis technique. The variation in structural, surface morphology, electrical, optical and photoluminescent properties as a function of substrate temperature is investigated. X-rays pattern confirms that as-synthesized IZO phase is grown along a (002) preferential plane. Nanosized grains (<50 nm) are determined by X-ray analysis. Morphology of as-grown films shows broadened nanostructures which have grown along c-axis and nanostructures are found to be smooth (RMS similar to 60 nm). Study by spectrophotometer reveals that the asgrown films are highly transparent in the visible and IR spectra (T similar to 88%), and that the bandgap is slightly narrowed (3.17 eV). Electrical measurements confirm the enhancement of conductivity, rho<1 Omega cm, due to indium incorporation into the starting solution. An electron concentration of 10(17) cm(-3) and a mobility of 3 cm(2)/Vs are found for IZO films grown at 400 degrees C. The photoluminescence analysis demonstrates strong yellow (2.1 eV) and blue (2.8 eV) light and weak green (2.3 eV) emissions. (C) 2013 Elsevier Ltd. All rights reserved.Öğe Spectroscopic ellipsometry, optical, structural and electrical investigation of sprayed pure and Sn-doped ZnO thin films(E D P Sciences, 2012) Mokhtari, H.; Benhaliliba, M.; Aida, M. S.; Attaf, N.; Ocak, Y.in this work, we report the transparent pure and Sn-doped zinc oxide (ZnO). The films were deposited onto microscope glass substrate which was heated at 350+/-5C degrees by ultrasonic spray pyrolysis (U S P) deposition technique. The concentrations of Sn were selected within the range of 0-3% by step of 0.5% and the time deposition is kept at 5 min. A (002)-oriented wurtzite crystal structure was confirmed by X-rays patterns; and grain size varied within the range 7.37-14.84nm, and cristanillity is calculated goes from14.4 to 45.9%. Based on UV-VIS-IR analysis, the results revealed the high transparency of the sprayed films which exceeds 90%. The band gap energy was of 3.26-3.30 eV. The film thickness was estimated by spectroscopy ellipsometry and the found values were of 165-270nm. The refractive index is in the range of 2.75. The obtained electrical parameters were around 10(18) cm(-3), 3.6 cm(2)/Vs, 1.6 Omega.cm; 5.8cm(3)/C. finally the Sn-doping has influenced the physical parameters of as-ground ZnO filmsÖğe Spin coated (Mx, Zn1-x O), M= Sn, Al nanofibers investigation(E D P Sciences, 2012) Benhaliliba, M.; Benouis, C. E.; Tiburcio-Silver, A.; Ocak, Y. S.(M-x, Zn (1-x) O), M= Sn, Al nanofibers properties were investigated. Pure and M-doped zinc oxide films were fabricated onto a glass substrate by a facile and low cost spin coating route. X-rays analysis reveals that films crystallize with a wurtzite structure according to (002) orientation. The transmittance in the visible range was as high as 88 % at 550 nm. The doping increased slightly the transmittance, the as-grown films were high transparent in VIS and IR ranges. The optical band gap was a little bit changed by doping. AFM 3D-views revealed that grains were nanofibers with the size of 18.22, 18.23 and 44.27 nm respectively for pure, Al and Sn-doped ZnO films.Öğe The sprayed ZnO films: nanostructures and physical parameters(Iop Publishing Ltd, 2015) Benhaliliba, M.; Tiburcio-Silver, A.; Avila-Garcia, A.; Tavira, A.; Ocak, Y. S.; Aida, M. S.; Benouis, C. E.We synthesized the pure and indium-doped (IZO) ZnO films with a facile composition control spray pyrolysis route. The substrate temperature (T-s) and In-doping effects on the properties of as-grown films are investigated. The X-ray pattern confirms that the as-synthesized ZnO phase is grown along a (002) preferential plane. It is revealed that the crystalline structure is improved with a substrate temperature of 350 degrees C. Moreover, the morphology of as-grown films, analyzed by AFM, shows nanostructures that have grown along the c-axis. The (3 x 3 mu m(2)) area scanned AFM surface studies give the smooth film surface RMS < 40 nm. The UV-VIS-IR measurements reveal that the sprayed films are highly transparent in the visible and IR bands. The photoluminescence analysis shows that the strong blue and yellow luminescences of 2.11 and 2.81 eV are emitted from ZnO and IZO films with a slight shift in photon energy caused by In-doping. The band gap is a bit widened by In-doping, 3.21 eV ( ZnO) and 3.31 eV (IZO) and the resistivity is reduced from 385 to 8 Omega.m. An interesting result is the resistivity linear dependence on the substrate temperature of pure ZnO films.Öğe Synthesis and Properties of Au/PVP/p-Si/Al Heterojunction Diode(Ieee, 2014) Benhaliliba, M.; Ocak, Y. S.; Mokhtari, H.; Benouis, C. E.Properties of heterojunction diodes having polyvinyl pyrrolidone (PVP) on p-Si substrate are investigated. PVP layer has grown onto p type silicon substrate via the sol gel spin coating route @ 2000 rpm. The Front contacts have been thermally evaporated in vacuum onto the organic layer at low pressure of 10-6 T, having a diameter of 1.5 mm and a thickness around 250 +/- 10 nm. In this research, the electronic parameters of Au/PVP/p-Si/Al structures have been investigated. The obtained values indicate that the electronic parameters of the diode, like ideality factor (n), saturation current, barrier height (Phi(B)), and rectification coefficient (R) are respectively found to be (in dark) 2.2, 0.8 mu A, 0.61 V, and 1.85x10(4). The open circuit voltage V-OC is about 0.2 V. A non-diode ideal behavior is observed and ideality factor exceeds the unity (n> 5). Consequently, V-OC only depends on the solar cell material. We fabricate the device in the aim to use it in solar cell, photodiode and photoconductor applications.
