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    Öğe
    Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer
    (Elsevier, 2011) Aydin, Mehmet Enver; Soylu, Murat; Yakuphanoglu, Fahrettin; Farooq, W. A.
    The electronic properties of metal-organic semiconductor-inorganic semiconductor structure between GaAs and poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic film have been investigated via current-voltage and capacitance-voltage methods. The Au/PEDOT/n-GaAs contact exhibits a rectification behavior with the barrier height of 0.69 eV and ideality factor value of 3.94. The barrier height of the studied diode (0.67 eV) is lower than that of Ni/n-GaAs/In (0.85 eV) and Au/n-GaAs/In Schottky diodes. The decrease in barrier height of Au/n-GaAs/In Schottky diode is likely to be due to the variation in the space charge region in the GaAs. The obtained results indicate that control of the interfacial potential barrier for metal/n-GaAs diode was achieved using thin interlayer of the poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol). (c) 2010 Elsevier B.V. All rights reserved.
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    Öğe
    Temperature-dependent behavior of Ni/4H-nSiC Schottky contacts
    (Amer Inst Physics, 2007) Aydin, Mehmet Enver; Yildirim, Nezir; Tueruet, Abdulmecit
    The current-voltage (I-V) characteristics of Ni/4H-nSiC Schottky diodes have been measured in the temperature range of 180-300 K with a temperature step of 20 K. An experimental barrier height (BH) Phi(ap) value of about 1.32 eV was obtained for the Ni/4H-nSiC Schottky diode at the 300 K. A decrease in the experimental BH Phi(ap) and an increase in the ideality factor n with a decrease in temperature have been explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights due to the BH inhomogeneities at the metal-semiconductor interface. (Phi) over bar (b) and A(*) as 1.71 eV, and 156.3 A/cm(2) K-2, respectively, have been calculated from a modified ln(I-0/T-2)-q(2)sigma(2)(s)/2k(2)T(2) vs 1/T plot using the temperature-dependent experimental I-V characteristics of the Ni/4H-nSiC contact. The Richardson constant value of 156.3 A/cm(2) K-2 is in close agreement with 146 A/cm(2) K-2 known for 4H-nSiC. (C) 2007 American Institute of Physics.