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    Öğe
    The effect of series resistance on the relationship between barrier heights and ideality factors of inhomogeneous Schottky barrier diodes
    (Royal Swedish Acad Sciences, 2004) Akkiliç, K; Aydin, ME; Türüt, A
    We have studied Cd/n-Si (33 dots) Schottky barrier diodes (SBDs). Si surfaces have been prepared by the usual chemical etching. and the evaporation of metal has been carried out in a conventional vacuum system. The effective Schottky barrier heights (SBHs) and ideality factors obtained from the current-voltage (I-V) characteristics differ from diode to diode although the samples were identically prepared. The SBH for the Cd/n-Si diodes ranged from 0.605 eV to 0.701 eV. and ideality factor n from 1.213 to 1.913. The reason for that the experimental data differ from diode to diode has been analyzed by applying thermionic emission theory (TET) of inhomogeneous Schottky contacts together with standard TET and thus the effect of series resistance on the relationship between barrier heights and ideality factors of the inhomogeneous SBDs has clearly been shown. A laterally homogeneous SBH value of approximately 0.770eV for Cd/n-Si SDs has been obtained by the barrier inhomogeneity model.
  • [ X ]
    Öğe
    Relationship between barrier heights and ideality factors of H-terminated Pb/p-Si contacts with and without the interfacial oxide layer
    (Elsevier Science Bv, 2004) Aydin, ME; Akkiliç, K; Kiliçoglu, T
    We have fabricated H-terminated Pb/p-type Si Schottky contacts with and without the native oxide layer to explain the difference between their barrier height values. It has been experimentally seen that the effective barrier heights (BHs) and ideality factor of identically fabricated diodes varied from diode to diode, and that there is a linear relationship between experimentally effective BHs and ideality factors of Schottky contacts that may be attributed to lateral inhomogeneities of the BHs. The BH value for the Pb/p-Si contacts without the interfacial oxide layer (MS sample) has ranged from 0.741 to 0.765 eV, and the ideality factor n from 1.001 to 1.040. The 1311 value for the Pb/p-Si contacts with the interfacial oxide layer (MIS sample) has ranged from 0.746 to 0.779 eV, and the ideality factor n value from 1.035 to 1.124. Furthermore, the extrapolations of the linear plot of the experimental BHs versus ideality factors have given laterally homogeneous barrier height values approximately 0.757 and 0.769 eV for the MS and MIS Pb/p-Si contacts, respectively. (C) 2003 Elsevier B.V. All rights reserved.