Yazar "Aydin, M. Enver" seçeneğine göre listele

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    Electrical characterization of inorganic-on-organic diode based InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS)
    (Pergamon-Elsevier Science Ltd, 2012) Aydin, M. Enver; Yakuphanoglu, F.
    The electronic properties of metal-organic semiconductor-inorganic semiconductor diode between InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS) polymeric organic semiconductor film have been investigated via current-voltage and capacitance-voltage methods. The Al/PEDOT:PSS/p-InP contact exhibits a rectification behavior with the barrier height value of 0.98 eV and with the ideality factor value of 2.6 obtained from their forward bias current voltage (I-V) characteristics at the room temperature greater than the conventional Al/p-InP (0.83 eV, n = 1.13). This increase in barrier height and ideality factor can be attributed to PEDOT:PSS film formed at Al/p-InP interface. (C) 2012 Elsevier Ltd. All rights reserved.
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    Hybrid photodiodes based on 6,13-bis(triisopropylsilylethynyl) pentacene: poly[2-methoxy-5-(2-ethyl) hexoxy-phenylenevinylene]/p-silicon
    (Pergamon-Elsevier Science Ltd, 2013) Alahmed, Z. A.; Mansour, Sh A.; Aydin, M. Enver; Yakuphanoglu, F.
    6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS) and poly[2-methoxy-5-(2-ethyl) hexoxy-phenylenevinylene] (MEH-PPV) blends with different ratios were deposited onto a p-type silicon (p-Si) single crystal wafer using spin coating technique. The dark current-voltage characteristics of the fabricated diodes were studied at room temperature. This study was carried out to predict the best blend composite to obtain a qualified diode for use in potential application. The obtained results suggest that the diode with 10:4 ratio between TIPS and MEH-PPV has the highest values for both the rectification factor (r=1.7 x 10(3)) and the ratio between shunt resistance, R-sh, and series resistance, R-s, (R-sh/R-s=1.23 x 10(4)) among the investigated diodes. Accordingly, the capacitance-voltage-frequency and conductance-voltage-frequency measurements were carried out for this diode in the frequency range between 10 kHz and 1 MHz at room temperature. Moreover, the I-V characteristics of such a diode were studied under different illumination intensities (P = 20 : 100 mW/cm(2)). The obtained results show a highly optoelectric response; i.e., the diode can be operated as a heterojunction photodiode. Crown Copyright (c) 2013 Published by Elsevier Ltd. All rights reserved.
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    Improved electrical and photosensing properties of CuPc phtalocyanine/p-silicon diode by nanostructure
    (Natl Inst Optoelectronics, 2012) Cavas, M.; Aydin, M. Enver; Al-Ghamdi, A. A.; Al-Hartomy, Omar A.; El-Tantawy, Farid; Yakuphanoglu, F.
    The electrical and photovoltaic properties of metal/nanostructure CuPc phtalocynine organic layer /semiconductor diode have been investigated. The diode indicated a good rectifying behavior with non-linear behavior due to the organic and inorganic interfacial layers. The barrier height (0.77 eV) and ideality factor (1.99) of the studied diode is higher than that of conventional Al/p-Si Schottky diode. This indicates that barrier height could be increased by using CuPc phtalocynine organic layer on p-type silicon by changing the space charge region of p-type silicon. The photovoltaic parameters of the diode were found to be Voc=0.25 and J(sc)=607.2 mu A under AM1.5. The obtained results indicate that the barrier height of conventional Al/p-Si Schottky diode can be increased by organic modification and metal/nanostructure CuPc/semiconductor diode can be used for optoelectronic device applications as a photosensor.
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    Öğe
    Modification of electrical properties of the Au/1,1? dimethyl ferrocenecarboxylate/n-Si Schottky diode
    (Elsevier Science Sa, 2010) Aydin, M. Enver; Yakuphanoglu, Fahrettin; Ozturk, Gulsen
    The electrical and interface state density properties of the Au/1,1' dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I-V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1' dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters. (C) 2010 Elsevier B.V. All rights reserved.