Yazar "Asubay S." seçeneğine göre listele

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    Öğe
    Production of PbO thin film using Silar method and electronıc and interface properties of Pb/PbO/p-Si MIS contacts
    (S.C. Virtual Company of Phisics S.R.L, 2022) Erdem E.; Asubay S.; Gullu O.
    In this paper, using SILAR thin film technique, which is low cost and is easy to control, the lead oxide (PbO) thin film was grown onto both microscope glass and inorganic semiconductor silicon (Si) wafer after appropriate chemical cleaning processes. The coating stage was performed by keeping the solution at 80 ?. After forming a PbO thin film on the silicon semiconductor, Pb metal was evaporated onto its upper surface. Optical, morphological and structural properties of the PbO thin film formed on glass were investigated. The electrical and interface characteristics of the Pb/PbO/p-Si MIS Schottky diode were investigated in the dark by using current-voltage (I-V), capacity-voltage (C-V) and conductance-voltage (G-V) in 10kHz-2MHz frequency range and capacity-frequency (C-f) characteristics in 1kHz-10MHz frequency range. © 2022, S.C. Virtual Company of Phisics S.R.L. All rights reserved.
  • [ X ]
    Öğe
    Reactively sputtered MoO3 thin films and temperature dependence of electrical properties of an Ag/MoO3/n-Si Diode
    (S.C. Virtual Company of Phisics S.R.L, 2018) Cebisli G.; Asubay S.; Ocak Y.S.
    MoO3 thin films were deposited onto n-Si and soda lime glass substrates by the reactive sputtering method. The influence of reactive gas flows on the morphological, structural and optical properties of thin films were analyzed by Atomic Force Microscopy (AFM), X-ray Diffraction (XRD) system and UV-Vis data. It was seen that the homogeneity and amorphousness of the films increase with the O2 ratio. In addition, the Ag/MoO3/n-Si structure was obtained by evaporation of Ag on MoO3/n-Si structure. It was seen that the device had excellent rectification. The electrical properties of Ag/MoO3/n-Si structure were analyzed by current-voltage (I-V) measurements in the dark between 77 and 500 K. It was reported that the temperature had a strong influence on the electrical parameters of the device. © 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved.