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    Review-Gate Oxide Thin Films Based on Silicon Carbide
    (Electrochemical Soc Inc, 2022) Odesanya, Kazeem Olabisi; Ahmad, Roslina; Andriyana, Andri; Bingol, Sedat; Wong, Yew Hoong
    A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented in this report. The SiC material, which is mostly employed as base component in metal oxide semiconductor field effect transistors (MOSFETs) is very promising; for its high voltage, high power, high temperature and high breakdown field properties. These features have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs. It also identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiO2/SiC system. Reliability as a significant aspect of electronic structures was also discussed with much emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.
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    Öğe
    Thermal characterization and stress analysis of Ho2O3 thin film on 4H–SiC substrate
    (Elsevier Ltd, 2022) Odesanya, Kazeem Olabisi; Ahmad, Roslina; Andriyana, Andri; Bingöl, Sedat; Çetinkaya, Rıdvan; Wong, Yew Hoong
    The performance of a metal oxide semiconductor during operation could be hindered significantly due to thermodynamic instability and mismatch between the gate oxide layer and the substrate. Owing to variation in temperature during thermal applications, the thin film layers and substrates in complementary metal oxide semiconductor (CMOS) structures are subjected to high thermal stresses, which can result in large deformation and failure. In this study, the distribution of heat and thermal stress between the Ho2O3 thin film and the SiC substrate has been simulated numerically with finite element modelling and analysis software (ANSYS). This is necessary to emulate the thermal behaviour of the structure under different thermal loadings, and for each temperature loading, the effects of thermal stress and deformation on the structure were also evaluated. Based on the results of the simulation, an optimum temperature was suggested. The thermal stability and characteristics of the thin film layer/SiC structure were evaluated and validated for better electrical performance.