Yazar "Akkilic, Kemal" seçeneğine göre listele

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    Öğe
    The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode
    (Elsevier Science Sa, 2007) Akkilic, Kemal; Uzun, Ilhan; Kilicoglu, Tahsin
    In this study, the film of chitosan by adding the solution of chitosan being a polymeric compound on the top of an n-Si substrate and then by evaporating solvent was formed. It was seen that the chitosan/n-Si contact demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current-voltage (I-V) curves studied at room temperature. Average barrier height and ideality factor values for this structure were determined as 0.94 eV and 1.81, respectively. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitosan/n-Si substrate in the energy range (E-c-0.785) to (E-c-0.522) eV have been determined from the I-V characteristics. The interface state density N-ss ranges from 5.39 x 10(12) cm(-2) eV(-1) in (E-c-0.785) eV to 1.52 x 10(13) cm(-2) eV(-1) in (E-c-0.522) ev. The interface state density has an exponential rise with bias from the midgap towards the bottom of the conduction band. (c) 2007 Elsevier B.V. All rights reserved.
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    Öğe
    Characterization of synthesized new chitin derivatives and Schottky diodes made using these derivatives
    (Springer, 2020) Uzun, Ilhan; Orak, Ikram; Karakaplan, Mehmet; Yagmur, Hatice Karaer; Yalcin, Serife Pinar; Akkilic, Kemal
    In this study, two new chitin derivatives were firstly synthesized. The products formed as a result of the reactions between chitin with 4-bromo-1,8-naphthalic anhydride and 4,4 '-oxydiphthalic anhydride were abbreviated as C4B18NA and C44 ' OA, respectively. The structures of the chitin derivatives were illuminated by various spectroscopic methods (FTIR, NMR, and XRD), and it was thus confirmed that they were synthesized. The surface structures of the chitin derivatives were investigated by SEM technique. Then, two separate diodes were made using aluminum as metal, the chitin derivatives as interfacial layer, and p-Si as semiconductor. Some important properties of the diodes made were determined both in the dark and under an illumination of 100 mW/cm(2). It was seen that the diodes are more ideal than most of the diodes where aluminum and p-type silicon were used as metal and semiconductor in their structures, respectively.
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    Öğe
    The influence of substrate temperature on RF sputtered CdS thin films and CdS/p-Si heterojunctions
    (Elsevier Sci Ltd, 2017) Bozkaplan, Cihat; Tombak, Ahmet; Genisel, Mustafa Fatih; Ocak, Yusuf Selim; Akkilic, Kemal
    Cadmium sulfide (CdS) thin films were deposited onto soda lime glasses and p-Si semiconductors at various substrate temperatures (40, 150 and 275 degrees C) by radio frequency (RF) sputtering technique. The effect of substrate temperature on morphological, structural and optical properties of CdS thin films were analyzed by means of atomic force microscopy (AFM), x-ray diffraction (XRD) and uv-vis spectrum data. The results showed that the average roughness (R-a) of thin films increased from 2.0 to 4.0 nm and all films had hexagonal wurtzite structure. The optical band gaps of CdS thin films varied between 2.46-2.43 eV. Characteristic parameters of CdS/p-Si heterojunctions including ideality factor, barrier height, series resistance and rectification ratio were measured. It was seen that both ideality factor and barrier height values of the heterojunctions increase with the increase substrate temperature. It was attributed to increase in inhomogenity of the thin films. Furthermore, the photoelectrical parameters of CdS/p-Si heterojunctions were studied.