Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction

Abstract

Tetrathiafulvalene (TTF) with C6H4S4 molecular formula was used in the fabrication of organic inorganic (OI) heterojunction. The Al/TTF/p-InP/Au-Zn structure was fabricated by forming a thin TTF organic semiconductor on p-InP inorganic semiconductor and evaporating of Al metal on the film. The characteristic parameters of the device were determined by using current-voltage (I-V) and capacitance voltage (C-V) measurements. Interface state density distribution was calculated from the I-V characteristics. The I-V characteristics of the device were also examined at 100 mW/cm(2) illumination intensity by the help of a solar simulator with AM1.5 global filter. (C) 2014 Elsevier B.V. All rights reserved.