A novel device behavior of Ag/MgPc/n-GaAs/Au-Ge organic based Schottky diode

Abstract

The fabricated Ag/MgPc/n-GaAs/Au-Ge Schottky diode is investigated by using the electrical parameters obtained from the current-voltage (I-V) characteristics measurement at room temperature under dark and light conditions. The Cheung and Norde methods with the I-V characteristics are used to calculate and extract the Schottky diode parameters under dark and light (100 mW/cm(2)) comprising ideality factor n, barrier height (Phi(b)), series resistance (R-s) short circuit current density (J(sc)) and open circuit voltage (V-oc) are respectively found to be 3.64, 0.53 eV, 32.67 Omega, 1.129 mA/cm(2) and 0.35 V. It is seen that the value of R-s and J(sc) are low compared to the literature work which is ascribed to the configuration of Schottky diode structure such as substrate, front and back contacts. Here, we review the contribution to the understanding of magnesium phthalocyanine (MgPc) based Schottky diode for the organic microelectronics applications. (C) 2015 Elsevier B.V. All rights reserved.