Browsing by Author "Asubay, S."
Now showing items 1-9 of 9
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Current-voltage and capacitance-voltage characteristics of Fe/p-InP Schottky barriers
Asubay, S.; Gullu, O. (Taylor & Francis Ltd, 2010)The electrical properties of identically prepared Fe/p-InP (29 dots in total) Schottky barrier diodes on the same p-type InP single crystal have been studied in this article. The effective Schottky barrier heights (SBHs) ... -
Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes
Asubay, S.; Gullu, O.; Turut, A. (Pergamon-Elsevier Science Ltd, 2009)We have reported a study of a number of metal/p-type InP (Cu, Au, Al, Sn, Pb, Ti, Zn) Schottky barrier diodes (SBDs). Each one diode has been identically prepared on p-InP under vacuum conditions with metal deposition. In ... -
Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
Asubay, S.; Gullu, O.; Turut, A. (Elsevier, 2008)We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 degrees C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current-voltage ... -
Electrical characterization of organic-on-inorganic semiconductor Schottky structures
Guellue, Oe; Tueruet, A.; Asubay, S. (Iop Publishing Ltd, 2008)We prepared a methyl red/p-InP organic-inorganic (OI) Schottky device formed by evaporation of an organic compound solution directly to a p-InP semiconductor wafer. The value of the optical band gap energy of the methyl ... -
Electrical characterization of the Al/new fuchsin/n-Si organic-modified device
Gullu, O.; Asubay, S.; Aydogan, S.; Turut, A. (Elsevier, 2010)The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the Al/new fuchsin (NF)/n-Si device have been investigated at room temperature. The I-V characteristic of the device shows a good rectification. ... -
Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices
Gullu, O.; Asubay, S.; Biber, M.; Kilicoglu, T.; Turut, A. (Edp Sciences S A, 2010)We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound ... -
Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes
Asubay, S.; Ava, C. A.; Gullu, O. (Virtual Co Physics Srl, 2022)Malachite Green (MG) organic dye thin film was prepared by simple drop casting method. Microstructural property of MG layer was investigated by Scanning Electron Microscopy (SEM). SEM image indicated that MG organic thin ... -
Production of PbO thin film using Silar method and electronic and interface properties of Pb/PbO/p-Si MIS contacts
Erdem, E.; Asubay, S.; Güllü, O. (Virtual Co Physics Srl., 2022)In this paper, using SILAR thin film technique, which is low cost and is easy to control, the lead oxide (PbO) thin film was grown onto both microscope glass and inorganic semiconductor silicon (Si) wafer after appropriate ... -
REACTIVELY SPUTTERED MoO3 THIN FILMS AND TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES OF AN Ag/MoO3/n-Si DIODE
Cebisli, G.; Asubay, S.; Ocak, Y. S. (Natl Inst R&D Materials Physics, 2018)MoO3 thin films were deposited onto n-Si and soda lime glass substrates by the reactive sputtering method. The influence of reactive gas flows on the morphological, structural and optical properties of thin films were ...
