Ozerden, EniseYildiz, MustafaOcak, Yusuf SelimTombak, AhmetKilicoglu, Tahsin2024-04-242024-04-2420141369-80011873-4081https://doi.org/10.1016/j.mssp.2014.06.006https://hdl.handle.net/11468/15892International Semiconductor Science and Technology Conference (ISSTC) -- JAN 13-15, 2014 -- Istanbul, TURKEYAn organic-inorganic rectifying contact was fabricated by forming a thin film of a Zinc Phthalocyanine (ZnPc) derivative, Zinc 2,3,9,10,16,17,23,24-octakis(octyloxy)-29H, 31H-phthalocyanine (oc-ZnPc), on a p-Si wafer and evaporating Al on the structure. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of Al/oc-ZnPc/p-Si structure were taken in dark at room temperature. The I-V measurements proved that the structure showed excellent rectification. Some basic diode parameters like ideality factor and barrier height were calculated from lnI-V plot. Ideality factor and barrier height values were found as 144 and 0.78 eV, respectively. The series resistance value of the structure was determined as 5.46 k Omega by means of Norde functions. The C-V measurements were taken for various frequencies and it was seen that the capacitance value decreased with increasing frequency. In addition I-V measurements of the Al/oc-ZaPc/p-Si/Al were repeated under light which had illumination intensity of 40-100 mW/cm(2). It was observed that reverse bias current of the diode increased with the light intensity. Therefore, the structure showed photodiode characteristics and it can be used for electrical and optoelectronic applications. (C) 2014 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccessSchottky DiodesZinc PhthalocyanineNorde FunctionSeries ResistanceConference Object287276WOS:0003456450000132-s2.0-8491144600210.1016/j.mssp.2014.06.006Q1Q2