Topal, GirayTombak, AhmetYigitalp, EsrefBatibay, DeryaKilicoglu, TahsinOcak, Yusuf Selim2024-04-242024-04-2420170361-52351543-186Xhttps://doi.org/10.1007/s11664-017-5446-4https://hdl.handle.net/11468/14817Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/n-Si organic-inorganic (OI) heterojunction-type devices were fabricated, and the current-voltage (I-V) characteristics of the devices have been investigated at room temperature. I-V characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log I-V plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log I-V plots. Thus, the modification of the Au/n-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The I-V measurements were repeated to characterize the devices at 100 mW/cm(2) illumination intensity with the help of a solar simulator with an AM1.5G filter.eninfo:eu-repo/semantics/closedAccessOrganic-Inorganic HeterojunctionSolar EnergyBarrier Height ModificationDiester DerivativeArticle46739583964WOS:0004030168000242-s2.0-8501610369910.1007/s11664-017-5446-4Q2Q3