Aydin, M. E.Kilicoglu, T.Akkilic, K.Hosgoren, H.2024-04-242024-04-2420060921-45261873-2135https://doi.org/10.1016/j.physb.2005.12.254https://hdl.handle.net/11468/15938An Au/beta-carotene/n-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound beta-carotene in chloroform on top of an n-Si substrate, and then evaporating the solvent. The beta-carotene/n-Si contact shows rectifying behaviour and the reverse curves exhibit a weak bias voltage dependence. The barrier height and ideality factor values of 0.80 eV and 1.32, respectively for this structure, have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface state density located in the inorganic semiconductor band gap at the organic compound/inorganic semiconductor interface in the energy range (E-c-0.76) to (E-c-0.53) eV have been determined from the I-V characteristics. The interface state density N-ss ranges from 5.84 x 10(12) cm(-2) eV(-1) in (E-c-0.76) eV to 8.83 x 10(13) cm(-2) eV(-1) in (E-c-0.53)eV. The interface state density has an exponential rise with bias from the mid-gap towards the bottom of the conduction band. (c) 2006 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSchottky BarriersSchottky DiodesOrganic-Inorganic Semiconductor ContactBeta-CaroteneArticle3811-2113117WOS:0002386644000202-s2.0-3374770223310.1016/j.physb.2005.12.254Q2Q3