Ocak, Yusuf SelimKulakci, MustafaTuran, RasitKilicoglu, TahsinGullu, Omer2024-04-242024-04-2420110925-83881873-4669https://doi.org/10.1016/j.jallcom.2011.03.114https://hdl.handle.net/11468/15572AZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380K with 20K intervals. The short current density (J(sc)) and open circuit voltage (V-oc) parameters have been determined between 40 and 100mW/cm(2). The photovoltaic parameters of the device have been also determined under 100mW/cm(2) and AM1.5 illumination condition. (C) 2011 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessZinc OxideIndium PhosphateHeterojunctionSolar CellSputteringArticle5092366316634WOS:0002903042000262-s2.0-7995575071710.1016/j.jallcom.2011.03.114Q1Q1