Asubay, S.Gullu, O.Turut, A.2024-04-242024-04-2420080169-43321873-5584https://doi.org/10.1016/j.apsusc.2007.11.050https://hdl.handle.net/11468/15156We have identically prepared Au/p-InP Schottky barrier diodes (SBDs). The diodes were annealed up to 400 degrees C thermally. The barrier height (BH) for the as-deposited Au/p-InP/Zn-Au SBDs from the current-voltage characteristics have varied from 0.58 to 0.72 eV, and ideality factor n from 1.14 to 1.47. The BH for the annealed SBDs from the current-voltage characteristics have varied from 0.76 to 0.82 eV, and ideality factor n from 1.17 to 1.39. As a result of the thermal annealing, it has been seen that the BH values of the annealed SBDs are larger than those of the as-deposited SBDs. We have determined a lateral homogeneous BH value of 0.72 eV for the as-deposited Au/p-InP SBD from the experimental linear relationship between barrier heights and ideality factors, and a value of 0.85 eV for the annealed Au/p-InP SBD. The increase of 0.13 eV in the BH value by means of 400 degrees C annealing has been ascribed to the formation of the excess charges that electrically actives on the semiconductor surface. (C) 2007 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessInp SemiconductorSchottky Barrier HeightMetal-Semiconductor-MetalcontactsBarrier InhomogeneityArticle2541135583561WOS:0002542438000482-s2.0-3974917570010.1016/j.apsusc.2007.11.050Q1Q1