A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts

Asubay, SezaiTürüt, Abdülmecit2024-04-242024-04-242020Asubay, S. ve Türüt, A. (2020). A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts. Australian Journal of Electrical and Electronics Engineering, 17(4), 278-285.1448-837Xhttps://doi.org/10.1080/1448837X.2020.1857564https://hdl.handle.net/11468/23472https://www.tandfonline.com/doi/full/10.1080/1448837X.2020.1857564The temperature-dependent capacitance-voltage (C-V) and current-voltage (I–V) characteristics of the Ti/p-InP/ZnAu Schottky contacts were investigated in this study. The current across a metal-semiconductor Schottky contact can vary sensitively with the change of the Schottky barrier heights (SBHs) and sample temperature. Thereby, the value of the C-V barrier height (Formula presented.) increased and the value of the I–V barrier height (Formula presented.) decreased with a decrease in temperature. Such a change was ascribed to a Gaussian distribution of the spatial inhomogeneity of the SBHs over whole range of the measurement temperatures. Thus, the temperature dependences of the I–V and C-V characteristics were interpreted by a quantitative analysis of spatial distribution (Gaussian distribution) of the SBHs presented as a useful model. Thus, this quantitative analysis was determined from the change of (Formula presented.) values with (2kT ?1).eninfo:eu-repo/semantics/closedAccessBarrier İnhomogeneityGaussian DistributionInp SemiconductorSchottky Barrier DiodeStandard DeviationA useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contactsA useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contactsArticle1742782852-s2.0-8509847666110.1080/1448837X.2020.1857564Q3