Kilicoglu, T.Ocak, Yusuf S.2024-04-242024-04-242007978-0-7354-0404-50094-243Xhttps://hdl.handle.net/11468/213826th International Conference of the Balkan-Physical-Union -- AUG 22-26, 2006 -- Istanbul, TURKEYThe Al/methyl red/p-Si Schottky barrier diode has been fabricated by adding a solution of the non-polymeric organic compound methyl red in chloroform on top of p-Si substrate, and then evaporating the solvent. The methyl red/p-Si contact shows rectifying behaviour and the reverse curve exhibits weak bias voltage dependence. Electronic parameters of Al/methyl red/p-Si Schottky barrier diode were calculated by using current-voltage (I-V) curve and interface state density distribution properties were obtained by using capacitance method. The interface state density has an exponential rise with bias from the mid-gap towards the top of the valance band.eninfo:eu-repo/semantics/closedAccessSchottky DiodesOrganic-Inorganic Semiconductor ContactMethyl RedThe calculation of electronic parameters of an Al/Methyl red/p-si Schottky diodeThe calculation of electronic parameters of an Al/Methyl red/p-si Schottky diodeConference Object899261+WOS:0002466479001092-s2.0-34547417593Q4N/A