Aydin, M. EnverYakuphanoglu, FahrettinOzturk, Gulsen2024-04-242024-04-2420100379-6779https://doi.org/10.1016/j.synthmet.2010.08.006https://hdl.handle.net/11468/16071The electrical and interface state density properties of the Au/1,1' dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current-voltage, capacitance-voltage and conductance-frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I-V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/omega-f plots and was of order of 5.61 x 10(12) eV(-1) cm(-2). It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1' dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters. (C) 2010 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessOrganic Schottky DiodeInterface PropertiesArticle16019-2021862190WOS:0002836819000222-s2.0-7795765773610.1016/j.synthmet.2010.08.006N/AQ2