Tombak, AhmetOcak, Yusuf SelimAsubay, SezaiKilicoglu, TahsinOzkahraman, Fatma2024-04-242024-04-2420141369-80011873-4081https://doi.org/10.1016/j.mssp.2014.03.004https://hdl.handle.net/11468/15891A Coumarin 30/p-Si organic-inorganic device was fabricated by forming a Coumarin 30 thin film on a p-Si semiconductor. The resulting structure had excellent rectifying properties. Electrical parameters of the structure were determined from current-voltage (I-V) measurements in the temperature range 300-380 K. While the barrier height (phi(b)) increased with increasing temperature, the ideality factor and series resistance of the diode decreased. I-V measurements of the structure were also performed under a solar simulator with AM1.5 filter and 100 mW/cm(2) illumination intensity. The structure had 59 mu A short-circuit current and 337 mV open-circuit voltage. Furthermore, capacitance-voltage (C-V) measurements of an Al/Coumarin 30/p-Si diode were carried out at various frequencies. The phi(b), value obtained by using C-V values was compared with that obtained by using I-V data. (C) 2014 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccessCoumarin 30Organic-Inorganic DeviceBarrier HeightTemperature EffectArticle24187192WOS:0003375538000282-s2.0-8489806903510.1016/j.mssp.2014.03.004Q1Q2