Ava, Canan AytuğBaturay, Şilan2024-04-242024-04-2420222618-6136https://doi.org/10.51477/mejs.1095220https://search.trdizin.gov.tr/yayin/detay/1102370https://hdl.handle.net/11468/28501Cu2MnSnS4 (CMTS) thin films are affected by several parameters related to different annealing including sulphur flux rate. In this paper, nontoxic CMTS samples were fabricated onto a soda glass lime substrate by spin-coating to investigate the effect of various sulphur flux rates on the crystal, topological and optical properties by using X-Ray diffraction, scanning electron microscopy, atomic force microscopy, and ultraviolet-visible spectrophotometer, respectively. The X-ray diffraction pattern showed that CMTS films had a main (112) oriented peak and crystallized in a stannite structure. The crystal parameters of CMTS thin films were changed depending on the increase of sulphur flux rate annealed at 550 °C for 90 minutes. The minimum value of dislocation value for CMTS film annealed 30 sccm sulphur flux rate showed the better crystallinity of the film. The scanning electron microscopy images of films showed a decrease in the particle size related to the increased flux of sulphur. AFM images showed that CMTS samples annealed at 40 sccm H2S: Ar had some clumping in the surface topology while CMTS samples annealed at 30 sccm H2S: Ar thin films were uniformly distributed. Ultraviolet-visible spectroscopy (Uv-vis) measurements of the thin films revealed that CMTS film absorbed a high amount of photons as the sulphur flux increased. The energy band gap for the CMTS films was 1.22 and 1.15 eV for 30 sccm and 40 sccm H2S: Ar, respectively. This work showed that different sulphur flux has a significant effect on the structural and morphological properties of CMTS thin films.eninfo:eu-repo/semantics/openAccessArticle813445110237010.51477/mejs.1095220