Aydin, M. EnverYakuphanoglu, F.2024-04-242024-04-2420120026-2714https://doi.org/10.1016/j.microrel.2012.03.005https://hdl.handle.net/11468/15837The electronic properties of metal-organic semiconductor-inorganic semiconductor diode between InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS) polymeric organic semiconductor film have been investigated via current-voltage and capacitance-voltage methods. The Al/PEDOT:PSS/p-InP contact exhibits a rectification behavior with the barrier height value of 0.98 eV and with the ideality factor value of 2.6 obtained from their forward bias current voltage (I-V) characteristics at the room temperature greater than the conventional Al/p-InP (0.83 eV, n = 1.13). This increase in barrier height and ideality factor can be attributed to PEDOT:PSS film formed at Al/p-InP interface. (C) 2012 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccess[No Keyword]Article52713501354WOS:0003057685000162-s2.0-8486181567210.1016/j.microrel.2012.03.005Q2Q2