Kilicoglu, TahsinOcak, Yusuf Selim2024-04-242024-04-2420110167-93171873-5568https://doi.org/10.1016/j.mee.2010.10.001https://hdl.handle.net/11468/15816An organic-inorganic heterojunction based on a BODIPY dyes has been produced by forming dye thin film on n-Si. The electrical parameters of the structure have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The ideality factor, the barrier height and the series resistance values of the diode have been calculated as 2.43, 0.84 eV, and about 1.3 k Omega, respectively. The diode behaves as a non-ideal diode because of the series resistance and interface layer. The barrier height value obtained from I-V measurement has been compared with one from C-V measurement. Moreover, it has been seen that the diode is highly sensitive to the light and the reverse bias current increases about 1 x 10(4) times at -1 V under 100 mW/cm(2) and AM1.5 illumination condition. The short photocurrent density (J(sc)) and the open circuit voltage (V-oc), the fill factor (FF) and power conversion efficiency (eta) have been determined as 3.78 mA/cm(2), 327 mV, 0.28 and 0.48 %, respectively. (C) 2010 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessBarrier HeightOrganic-Inorganic HeterojunctionBodipy DyePhotovoltaic BehaviorArticle882150154WOS:0002860874000032-s2.0-7865001466210.1016/j.mee.2010.10.001Q2Q2