Gezgin, Serap YiğitBaturay, ŞilanÖzaydın, CihatKılıç, Hamdi Şükür2024-11-072024-11-072024Gezgin, S. Y., Baturay, Ş., Özaydın, C. ve Kılıç, H. Ş. (2024). Experimental and theoretical investigation of Zr-Doped CuO/Si solar cell. Physica Status Solidi (A) Applications and Materials Science, 221(14), 1-13.1862-6300https://onlinelibrary.wiley.com/doi/10.1002/pssa.202400112https://hdl.handle.net/11468/28925Copper oxide (CuO) is a nanostructured semiconductor material with the potential for solar energy conversion and can be suitable for solar cells when used as a thin film. Herein, nondoped and doped (doping ratios of 1%, 2%, and 3% zirconium [Zr]) CuO thin films on silicon (Si) with the spin-coating technique are developed. Optical and topological characterizations of CuO thin films are examined by ultraviolet-visible and X-ray diffraction. The electrical properties of nondoped and Zr-doped CuO/Si heterojunctions are investigated with experimental current–voltage measurements in the dark and under illuminated conditions. The electrical behavior of nondoped and Zr-doped CuO/Si heterojunctions is obtained using the experimental J–V technique and computational Cheung–Cheung and Norde methods. A simulation based on nondoped and Zr-doped CuO/n-Si heterojunction solar cells using SCAPS-1D is completed. Photovoltaic (PV) parameters of experimentally produced and theoretically calculated CuO and Zr-doped CuO/Si heterojunction solar cells are compared. Accordingly, PV parameters of 1% Zr-doped CuO/Si solar cells show the highest power conversion efficiency calculated as a function of interfacial defect density and hole carrier concentration.eninfo:eu-repo/semantics/closedAccessCapacitance–voltageCurrent–voltageSCAPS-1DZr-doped CuOArticle22114113WOS:0012435339000012-s2.0-85195544008Q2Q3