Kilicoglu, T.Aydina, M. E.Topal, G.Ebeoglu, M. A.Saygili, H.2024-04-242024-04-2420070379-6779https://doi.org/10.1016/j.synthmet.2007.06.001https://hdl.handle.net/11468/16067The Al/tetraamide-I/p-Si Schottky barrier diode (SBD) has been prepared by adding a solution of a novel nonpolymeric organic compound chiral macrocylic tetraamide-I in chloroform on top of a p-Si substrate and then evaporating the solvent. It has been seen that the forward-bias current-voltage (I-V) characteristics of Al/tetraamide-I/p-Si SBD with a barrier height value of 0.75 eV and an ideality factor value of 1.77 showed rectifying behaviour. The energy distribution of the interface state density determined from I-V characteristics increases exponentially with bias from 5.81 x 10(12) cm(-2) eV(-1) at (0.59-E-v) eV to 1.02 x 10(13) cm(-2) eV(-1) at (0.40-E-v) eV. It has showed that space charge limited current (SCLC) and trap charge limited current (TCLC) are the dominant transport mechanisms at large forward-bias voltages. (C) 2007 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSchottky BarriersSchottky DiodesOrganic-Inorganic Semiconductor ContactTetraamide-IThe effect of a novel organic compound chiral macrocyclic tetraamide-I interfacial layer on the calculation of electrical characteristics of an Al/tetraamide-I/p-Si contactThe effect of a novel organic compound chiral macrocyclic tetraamide-I interfacial layer on the calculation of electrical characteristics of an Al/tetraamide-I/p-Si contactArticle15713-15540545WOS:0002503897000082-s2.0-3454845762110.1016/j.synthmet.2007.06.001Q1Q1