Asubay, S.Gullu, O.2024-04-242024-04-2420100020-7217https://doi.org/10.1080/00207211003733304https://hdl.handle.net/11468/16634The electrical properties of identically prepared Fe/p-InP (29 dots in total) Schottky barrier diodes on the same p-type InP single crystal have been studied in this article. The effective Schottky barrier heights (SBHs) and ideality factors obtained from current-voltage (I-V) characteristics differ from diode to diode. The SBHs and the ideality factors for the Fe/p-InP diodes ranged from 0.71 to 0.86eV and 1.21 to 1.69, respectively. A lateral homogeneous SBH value of 0.91eV for the Fe/p-InP diodes has been calculated from the linear relationship between barrier heights and ideality factors, which can be explained by lateral inhomogeneities of the SBHs.eninfo:eu-repo/semantics/closedAccessSemiconductorInpSchottky BarrierIdeality FactorArticle978973983WOS:0002805178000082-s2.0-7795518584910.1080/00207211003733304Q3Q4