Yakuphanoglu, F.Ocak, Y. S.Kilicoglu, T.Farooq, W. A.2024-04-242024-04-2420110167-93171873-5568https://doi.org/10.1016/j.mee.2011.04.029https://hdl.handle.net/11468/15818The electronic parameters and photovoltaic properties of the Au/methylene blue/n-Si diodes were investigated by current-voltage and capacitance-conductance-frequency techniques. The diode exhibits a non-ideal behavior due the series resistance, organic layer and oxide layer. The barrier height (1.04 eV) of the Au/methylene blue/n-Si is higher than that of Au/n-Si Schottky diode (0.83 eV) due to an excess barrier formed by organic layer. The interface state density of the diode was determined using a conductance technique and was found to be 3.25 x 10(12) eV(-1) cm(-2). The diode shows a photovoltaic behavior with a maximum open circuit voltage V-oc of 0.23 V and short-circuit current I-sc of 20.8 mu A under 100 mW/cm(2). It is evaluated that Au/methylene blue/n-Si is an organic-on-inorganic photodiode with the obtained electronic parameters and methylene blue organic dye controls the interface and electrical properties of conventional metal/n-type silicon junction. (C) 2011 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessInorganic-Organic DiodeOrganic SemiconductorsInterface State PropertiesArticle88929512954WOS:0002955574000232-s2.0-8005156747410.1016/j.mee.2011.04.029Q2Q2