Kilicoglu, Tahsin2024-04-242024-04-2420080040-6090https://doi.org/10.1016/j.tsf.2007.06.022https://hdl.handle.net/11468/16160An Al/Methyl Red/p-Si sandwich Schottky barrier diode (SBD) has been fabricated by adding a solution of the organic compound Methyl Red in chloroform onto a p-Si substrate, and then evaporating the solvent. Current-voltage (I-V) measurements of the Al/Methyl Red/p-Si sandwich SBD have been carried out at room temperature and in the dark. The Al/Methyl Red/p-Si sandwich SBD demonstrated rectifying behavior. Barrier height (BH) and ideality factor values of 0.855 eV and 1.19, respectively, for this device have been determined from the forward-bias I-V characteristics. The Al/Methyl Red/p-Si sandwich SBD showed non-ideal I-V behavior with the value of ideality factor greater than unity. The energy distribution of the interface state density determined from I-V characteristics increases exponentially with bias from 3.68 x 10(12) cm(-2) eV(-1) at (0.81-E-v) eV to 9.99 x 10(13) cm(-2) eV(-1) at (0.69-E-v) eV. (C) 2007 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSchottky DiodesOrganic-Inorganic Semiconductor ContactMethyl RedArticle5166967970WOS:0002529804000152-s2.0-3734902479810.1016/j.tsf.2007.06.022Q2Q1