Benhaliliba, MostefaOcak, Yusuf Selim2024-08-132024-08-132024Benhaliliba, M. ve Ocak, Y. S. (2024). The inventive manufacturing and characterization of Au/BG/p-Si/Al devices for solar cell applications. Applied Physics A: Materials Science and Processing, 130(6), 1-12.0947-8396https://link.springer.com/article/10.1007/s00339-024-07521-8https://hdl.handle.net/11468/28719Novel dye brilliant green (BG) based devices are fabricated using a low–cost spin coating process on a p–type silicon substrate. The front gold contact is deposited onto the BG film at a high vacuum. The current–voltage measurements in the dark and under various light intensities at room temperature are performed. Experimental data are exploited, and electrical parameters are extracted to describe a non–ideal diode behavior of the BG–based device. The Cheung and Norde approximations and thermionic emission theory are utilized to extract the suitable electrical parameters, including ideality factor (n), barrier height (Φb), series resistance (RS), open-circuit voltage (VOC), short circuit current (ISC), and interface state density (Dit). The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of Au/BG/p–Si/Alheterostructure are described in the dark and room temperature. Furthermore, the influence of the resistance series and the interface states on the operation of the diodes in the dark and illumination modes is also emphasized.eninfo:eu-repo/semantics/closedAccessBrilliant green dye organic diodesCapacitance–voltageCheung’s methodCurrent–voltage characteristicPhotovoltaic parametersArticle1306112WOS:0012194797000012-s2.0-85192087443Q2N/A