Kilicoglu, TahsinTombak, AhmetOcak, Yusuf SelimAydemir, Murat2014-11-172014-11-172014Kilicoglu, Tahsin, Tombak, Ahmet, Ocak, Yusuf Selim,Aydemir, Murat "Electrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunction"Microelectronic Engineering 129 (2014) 91–95..https://hdl.handle.net/11468/444http://www.sciencedirect.com/science/article/pii/S016793171400330X#Tetrathiafulvalene (TTF) with C6H4S4 molecular formula was used in the fabrication of organic inorganic (OI) heterojunction. The Al/TTF/p-InP/Au-Zn structure was fabricated by forming a thin TTF organic semiconductor on p-InP inorganic semiconductor and evaporating of Al metal on the film. The characteristic parameters of the device were determined by using current-voltage (I-V) and capacitance voltage (C-V) measurements. Interface state density distribution was calculated from the I-V characteristics. The I-V characteristics of the device were also examined at 100 mW/cm(2) illumination intensity by the help of a solar simulator with AM1.5 global filter. (C) 2014 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessOrganic-inorganic heterojunctionTetrathiafulvaleneBarrier heightSchottky-barrier diodeThin-flim transistorsSolar-cellVoltage characteristicPhotovoltaic propertiesSemiconductor contactElectronic-PropertisSeries resistanceN-SıFabricationElectrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunctionElectrical and photoelectrical characterization of a TTF/p-InP organic–inorganic heterojunctionArticleWOS:0003428854000172-s2.0-8492627896510.1016/j.mee.2014.07.025N/AQ3