Ocak, Yusuf SelimGuven, Reyhan GulTombak, AhmetKilicoglu, TahsinGuven, KemalDogru, Mehmet2024-04-242024-04-2420131478-64351478-6443https://doi.org/10.1080/14786435.2013.765985https://hdl.handle.net/11468/17002A metal/interlayer/semiconductor (Al/enzyme/p-Si) MIS device was fabricated using -amylase enzyme as a thin biofilm interlayer. It was observed that the device showed an excellent rectifying behavior and the barrier height value of 0.78eV for Al/-amylase/p-Si was meaningfully larger than the one of 0.58eV for conventional Al/p-Si metal/semiconductor (MS) contact. Enhancement of the interfacial potential barrier of Al/p-Si MS diode was realized using enzyme interlayer by influencing the space charge region of Si semiconductor. The electrical properties of the structure were executed by the help of current-voltage and capacitance-voltage measurements. The photovoltaic properties of the structure were executed under a solar simulator with AM1.5 global filter between 40 and 100mW/cm(2) illumination conditions. It was also reported that the -amylase enzyme produced from Bacillus licheniformis had a 3.65eV band gap value obtained from optical method.eninfo:eu-repo/semantics/closedAccess-AmylaseBarrier HeightSeries ResistanceMis ContactArticle931721722181WOS:0003205758000062-s2.0-8487969152610.1080/14786435.2013.765985Q3Q1