Electrical and photovoltaic properties of an organic-inorganic heterojunction based on a BODIPY dye
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Tarih
2011
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
An organic-inorganic heterojunction based on a BODIPY dyes has been produced by forming dye thin film on n-Si. The electrical parameters of the structure have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The ideality factor, the barrier height and the series resistance values of the diode have been calculated as 2.43, 0.84 eV, and about 1.3 k Omega, respectively. The diode behaves as a non-ideal diode because of the series resistance and interface layer. The barrier height value obtained from I-V measurement has been compared with one from C-V measurement. Moreover, it has been seen that the diode is highly sensitive to the light and the reverse bias current increases about 1 x 10(4) times at -1 V under 100 mW/cm(2) and AM1.5 illumination condition. The short photocurrent density (J(sc)) and the open circuit voltage (V-oc), the fill factor (FF) and power conversion efficiency (eta) have been determined as 3.78 mA/cm(2), 327 mV, 0.28 and 0.48 %, respectively. (C) 2010 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Barrier Height, Organic-Inorganic Heterojunction, Bodipy Dye, Photovoltaic Behavior
Kaynak
Microelectronic Engineering
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
88
Sayı
2
