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The influence of Ge substitution and H2S annealing on Cu2ZnSnS4 thin films
Cu2Zn(Sn1-xGex)S-4 thin films (where x = 0, 0.25, 0.50, 0.75, and 1) were deposited by spin coating technique and annealed under 30 and 40 ccm H2S:Ar (1:9) flows to understand the influence of Ge atom content ratio and H2S ...
Electrical properties of an Ag/ZnS/p-Si heterojunction obtained by sputtered ZnS thin film
ZnS thin films were deposited on both soda-lime glass and p-Si substrates by radio frequency (RF) sputtering of a single ZnS target. The morphological, structural, and optical properties of the films were analyzed. It was ...